1N5627-TR

1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 03-Sep-12
1
Document Number: 86063
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
Glass passivated junction
Hermetically sealed package
Controlled avalanche characteristics
Low reverse current
High surge current loading
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Rectification diode, general purpose
949588
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
1N5627 1N5627-TR 2500 per 10" tape and reel 12 500
1N5627 1N5627-TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
1N5624 V
R
= 200 V; I
F(AV)
= 3 A SOD-64
1N5625 V
R
= 400 V; I
F(AV)
= 3 A SOD-64
1N5626 V
R
= 600 V; I
F(AV)
= 3 A SOD-64
1N5627 V
R
= 800 V; I
F(AV)
= 3 A SOD-64
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
1N5624 V
R
= V
RRM
200 V
1N5625 V
R
= V
RRM
400 V
1N5626 V
R
= V
RRM
600 V
1N5627 V
R
= V
RRM
800 V
Peak forward surge current t
p
= 10 ms, half sinewave I
FSM
100 A
Repetitive peak forward current I
FRM
18 A
Average forward current I
F(AV)
3A
Pulse avalanche peak power
t
p
= 20 μs, half sine wave,
T
j
= 175 °C
P
R
1000 W
Pulse energy in avalanche mode, non repetitive
(inductive load switch off)
I
(BR)R
= 1 A, T
j
= 175 °C E
R
20 mJ
i
2
*t-rating i
2
*t 40 A
2
*s
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
l = 10 mm, T
L
= constant R
thJA
25 K/W
On PC board with spacing 25 mm R
thJA
70 K/W
1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 03-Sep-12
2
Document Number: 86063
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 3 A V
F
--1V
Reverse current
V
R
= V
RRM
I
R
-0.1A
V
R
= V
RRM
, T
j
= 100 °C I
R
- 5 10 μA
Breakdown voltage
I
R
= 100 A, t
p
/T = 0.01,
t
p
= 0.3 ms
V
(BR)
- - 1600 V
Diode capacitance V
R
= 4 V, f = 1 MHz C
D
-4060pF
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
-3.55μs
I
F
= 1 A, dI/d
t
= 5 A/μs, V
R
= 50 V t
rr
-4.57.5μs
Reverse recovery charge I
F
= 1 A, dI/d
t
= 5 A/μs Q
rr
-812C
0 5 10 15 25
0
10
20
30
40
R
thJA
- Therm. Resist.
Junction/Ambient (K/W)
I - Lead Length (mm)
30
94 9563
20
ll
T
L
= constant
I
– Forward Current ( A)
0.001
0.010
0.100
1.000
10.000
100.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
Forward Voltage ( V )16392
F
T
j
=25°C
T
j
=175°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T
amb
- Ambient Temperature (°C)
16393
Average Forward Current (A)
I
FAV
-
V
R
=V
RRM
half sinewave
R
thJA
=25K/W
l=10mm
R
thJA
=70K/W
PCB: d=25mm
1
10
100
1000
25 50 75 100 125 150 175
T
j
Juncti on T emperature ( °C )16394
V
R
= V
RRM
I
– R everse Current ( A )
R
1N5624, 1N5625, 1N5626, 1N5627
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 03-Sep-12
3
Document Number: 86063
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
0
50
100
150
200
250
300
25 50 75 100 125 150 175
T
j
Juncti on Temperature ( °C )16395
V
R
= V
RRM
P
– R everse Power Dissipation ( mW )
R
P
R
Limit
@ 100%V
R
P
R
Limit
@ 80%V
R
0
10
20
30
40
50
60
70
80
90
100
0.1 1.0 10.0 100.0
V
R
R everse V oltage ( V )16396
C
D iode C apacitance ( pF )
D
f=1MHz
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587

1N5627-TR

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 3.0 Amp 800 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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