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SM5A27-E3/2D

P1-P3P4-P5
SM5A27
www.vishay.com
Vishay General Semiconductor
Revision: 10-Jul-12
1
Document Number: 88381
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
•T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
PRIMARY CHARACTERISTICS
V
BR
27 V
P
PPM
(10 x 1000 μs) 3600 W
P
D
5 W
V
WM
22 V
I
RSM
70 A
I
FSM
500 A
T
J
max. 175 °C
Polarity Uni-directional
Package DO-218AB
DO-218AB
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with 10/1000 μs waveform P
PPM
3600 W
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1) P
D
5.0 W
Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially
decaying waveform
I
RSM
70 A
Maximum working stand-off voltage V
WM
22.0 V
Peak forward surge current 8.3 ms single half sine-wave I
FSM
500 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 175 °C
SM5A27
www.vishay.com
Vishay General Semiconductor
Revision: 10-Jul-12
2
Document Number: 88381
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Measured on a 300 μs square pulse width
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Power Derating Curve Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Reverse Zener voltage I
Z
= 10 mA V
Z
24.0 - 30.0 V
Zener voltage temperature coefficient I
Z
= 10 mA V
ZTC
--36mV/°C
Clamping voltage for 10 μs/10 ms
exponentially decaying waveform
I
PP
= 55 A V
C
- - 40.0 V
Instantaneous forward voltage
I
F
= 6.0 A
V
F
(1)
--1.0
V
I
F
= 100 A - 0.95 -
Reverse leakage current Rated V
WM
T
J
= 25 °C
I
R
--0.2
μA
T
J
= 175 °C - - 10.0
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to case R
JC
1.0 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SM5A27HE3/2D
(1)
2.505 2D 750
13" diameter plastic tape and reel,
anode towards the sprocket hole
0
2.0
4.0
6.0
8.0
0
50
100
150 200
Power Dissipation (W)
Case Temperature (°C)
0
1000
500
1500
2000
2500
3000
25
50 75
100 125
150 175
Load Dump Power (W)
Case Temperature (°C)
SM5A27
www.vishay.com
Vishay General Semiconductor
Revision: 10-Jul-12
3
Document Number: 88381
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Pulse Waveform
Fig. 4 - Reverse Power Capability
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Reverse Characteristics
Fig. 7 - Typical Transient Thermal Impedance
0
50
100
150
0
10
20
30 40
Input Peak Pulse Current (%)
t - Time (ms)
t
d
t
r
= 10 μs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
T
J
= 25 °C
Pulse Width (t
d
) is
Dened as the Point
Where the Peak Current
Decays to 50 % of I
PPM
Reverse Surge Power (W)
1000
10 000
10
100
Pulse Width (ms) - ½ I
PP
Exponential Waveform
100
10
1.0
0.1
0.01
0.35 0.45 0.55 0.65 0.75 0.85 0.95
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 25 °C
100
10
1
0.1
0.01
0.001
0.0001
Instantaneous Reverse Current (μA)
Percentage of V
BR
(%)
5 203550658095
T
J
= 25 °C
T
J
= 175 °C
Transient Thermal Impedance (°C/W)
t - Pulse Width (s)
100
100
10
10
1
1
0.1
0.1
0.01
0.01
R
θJC
R
θJA
P1-P3P4-P5

SM5A27-E3/2D

Mfr. #:
Buy SM5A27-E3/2D
Manufacturer:
Vishay Semiconductors
Description:
ESD Suppressors / TVS Diodes RECOMMENDED ALT 625-SM5A27HE3
Lifecycle:
New from this manufacturer.
Delivery:
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