NCP5104, NCV5104
www.onsemi.com
4
ELECTRICAL CHARACTERISTIC (V
CC
= V
boot
= 15 V, V
GND
= V
bridge
, −40°C < T
J
< 125°C, Outputs loaded with 1 nF)
Rating Symbol
T
J
−40°C to 125°C
Units
Min Typ Max
OUTPUT SECTION
Output high short circuit pulsed current V
DRV
= 0 V, PW v 10 ms (Note 1) I
DRVsource
− 250 − mA
Output low short circuit pulsed current V
DRV
= Vcc, PW v 10 ms (Note 1) I
DRVsink
− 500 − mA
Output resistor (Typical value @ 25°C) Source R
OH
− 30 60 W
Output resistor (Typical value @ 25°C) Sink R
OL
− 10 20 W
High level output voltage, V
BIAS
−V
DRV_XX
@ I
DRV_XX
= 20 mA V
DRV_H
− 0.7 1.6 V
Low level output voltage V
DRV_XX
@ I
DRV_XX
= 20 mA V
DRV_L
− 0.2 0.6 V
DYNAMIC OUTPUT SECTION
Turn−on propagation delay (Vbridge = 0 V) (Note 2) t
ON
− 620 800 ns
Turn−off propagation delay (Vbridge = 0 V or 50 V) (Note 3) t
OFF
− 100 170 ns
Shutdown propagation delay, when Shutdown is enabled t
sd_en
− 100 170 ns
Shutdown propagation delay, when Shutdown is disabled t
sd_dis
− 620 800 ns
Output voltage rise time (from 10% to 90% @ V
CC
= 15 V) with 1 nF load t
r
− 85 160 ns
Output voltage fall time (from 90% to 10% @ V
CC
= 15 V) with 1 nF load t
f
− 35 75 ns
Propagation delay matching between the High side and the Low side
@ 25°C (Note 4)
Dt − 10 45 ns
Internal fixed dead time (Note 5) DT 400 520 650 ns
INPUT SECTION
Low level input voltage threshold V
IN
− − 0.8 V
Input pull−down resistor (V
IN
< 0.5 V) R
IN
− 200 − kW
High level input voltage threshold V
IN
2.3 − − V
Logic “1” input bias current @ V
IN
= 5 V @ 25°C I
IN+
− 5 25 mA
Logic “0” input bias current @ V
IN
= 0 V @ 25°C I
IN−
− − 2.0 mA
SUPPLY SECTION
Vcc UV Start−up voltage threshold Vcc_stup 8.0 8.9 9.8 V
Vcc UV Shut−down voltage threshold Vcc_shtdwn 7.3 8.2 9.0 V
Hysteresis on Vcc Vcc_hyst 0.3 0.7 − V
Vboot Start−up voltage threshold reference to bridge pin
(Vboot_stup = Vboot − Vbridge)
Vboot_stup 8.0 8.9 9.8 V
Vboot UV Shut−down voltage threshold Vboot_shtdwn 7.3 8.2 9.0 V
Hysteresis on Vboot Vboot_shtdwn 0.3 0.7 − V
Leakage current on high voltage pins to GND
(V
BOOT
= V
BRIDGE
= DRV_HI = 600 V)
I
HV_LEAK
− 5 40 mA
Consumption in active mode (Vcc = Vboot, fsw = 100 kHz and 1 nF load on
both driver outputs)
ICC1 − 4 5 mA
Consumption in inhibition mode (Vcc = Vboot) ICC2 − 250 400 mA
Vcc current consumption in inhibition mode ICC3 − 200 − mA
Vboot current consumption in inhibition mode ICC4 − 50 − mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Parameter guaranteed by design.
2. T
ON
= T
OFF
+ DT
3. Turn−off propagation delay @ Vbridge = 600 V is guaranteed by design.
4. See characterization curve for Dt parameters variation on the full range temperature.
5. Timing diagram definition see: Figure 4, Figure 5 and Figure 6.
