Jan2N6990

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE
AND FLATPACK SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
T4-LDS-0177 Rev. 1 (101229) Page 1 of 7
DEVICES LEVELS
2N6989 2N6989U JAN
2N6990 JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage
(3)
V
CEO
50 Vdc
Collector-Base Voltage
(3)
V
CBO
75 Vdc
Emitter-Base Voltage
(3)
V
EBO
6.0 Vdc
Collector Current
(3)
I
C
800 mAdc
Total Power Dissipation
@ T
A
= +25°C
2N6989
(2)
2N6989U
(2)
2N6990
(2)
P
D
1.5
1.0
1.0
W
Operating & Storage Junction Temperature Range T
op
, T
stg
-65 to +200 °C
Note:
1. Maximum voltage between transistors shall be 500Vdc.
2. For derating, see figures 6, 7, 8 and 9. Ratings apply to total package.
3. For thermal impedance curves, see figures 10, 11, 12 and 13.
4. Ratings apply to each transistor in the array.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
V
(BR)CEO
50 Vdc
Collector-Base Cutoff Current
V
CB
= 60Vdc
V
CB
= 75Vdc
V
CB
= 60Vdc, T
A
= +150°C
I
CBO
10
10
10
ηAdc
μAdc
μAdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 6.0Vdc
I
EBO
10
10
μAdc
ηAdc
TO-116 – 2N6989
20 PIN LEADLESS
2N6989U
14 PIN FLAT PACK
2N6990
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0177 Rev. 1 (101229) Page 2 of 7
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
h
FE
I
C
= 0.1mAdc, V
CE
= 10Vdc
50
I
C
= 1.0mAdc, V
CE
= 10Vdc
75 325
I
C
= 10mAdc, V
CE
= 10Vdc
100
I
C
= 150mAdc, V
CE
= 10Vdc
100 300
I
C
= 500mAdc, V
CE
= 10Vdc
30
I
C
= 10mAdc, V
CE
= 10Vdc, T
A
= -55°C
35
Collector-Emitter Saturation Voltage
V
CE(sat)
Vdc
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc
0.3
1.0
Base-Emitter Saturation Voltage
V
BE(sat)
Vdc
I
C
= 150mAdc, I
B
= 15mAdc
I
C
= 500mAdc, I
B
= 50mAdc
0.6 1.2
2.0
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Small–Signal Short-Circuit Forward Current Transfer Ratio
|h
fe
|
I
C
= 20mAdc, V
CE
= 10Vdc, f = 100MHz 2.5 8.0
Forward current Transfer Ratio
h
fe
50
I
C
= 1.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
Output Capacitance
C
obo
8.0 pF
V
CB
= 10Vdc, I
E
= 0, 100kHz f 1.0MHz
Input Capacitance
C
ibo
25 pF
V
EB
= 0.5Vdc, I
E
= 0, 100kHz f 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
t
on
SEE FIGURE 14 / MIL-PRF-19500/559
35
ηs
Turn-Off Time
t
off
ηs
SEE FIGURE 15 / MIL-PRF-19500/559
300
(4) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%.
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0177 Rev. 1 (101229) Page 3 of 7
PACKAGE DIMENSIONS

Jan2N6990

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
MOSFET BJTs
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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