TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland.
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE
AND FLATPACK SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/559
T4-LDS-0177 Rev. 1 (101229) Page 1 of 7
DEVICES LEVELS
2N6989 2N6989U JAN
2N6990 JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage
(3)
V
CEO
50 Vdc
Collector-Base Voltage
(3)
V
CBO
75 Vdc
Emitter-Base Voltage
(3)
V
EBO
6.0 Vdc
Collector Current
(3)
I
C
800 mAdc
Total Power Dissipation
@ T
A
= +25°C
2N6989
(2)
2N6989U
(2)
2N6990
(2)
P
D
1.5
1.0
1.0
W
Operating & Storage Junction Temperature Range T
op
, T
stg
-65 to +200 °C
Note:
1. Maximum voltage between transistors shall be ≥ 500Vdc.
2. For derating, see figures 6, 7, 8 and 9. Ratings apply to total package.
3. For thermal impedance curves, see figures 10, 11, 12 and 13.
4. Ratings apply to each transistor in the array.
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
V
(BR)CEO
50 Vdc
Collector-Base Cutoff Current
V
CB
= 60Vdc
V
CB
= 75Vdc
V
CB
= 60Vdc, T
A
= +150°C
I
CBO
10
10
10
ηAdc
μAdc
μAdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 6.0Vdc
I
EBO
10
10
μAdc
ηAdc
TO-116 – 2N6989
20 PIN LEADLESS
2N6989U
14 PIN FLAT PACK
2N6990