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IXGH50N90B2D1

P1-P3P4-P6P7-P7
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
50
55
0 25 50 75 100 125 150 175 200 225
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
0
5
10
15
20
25
30
35
40
0 30 6090120150
R
G
- Ohms
E
o f f
- milliJoules
I
C
= 25A
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 720V
I
C
= 50A
I
C
= 100A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0
2
4
6
8
10
12
14
16
18
20
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
o f f
- MilliJoules
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
0
2
4
6
8
10
12
14
16
18
20
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o f f
- milliJoules
I
C
= 100A
R
G
= 5Ω
V
GE
= 15V
V
CE
= 720V
I
C
= 50A
I
C
= 25A
Fig. 11. Dependence of Turn-off
Switching Time on R
G
200
300
400
500
600
700
800
900
1000
1100
1200
1300
5 101520253035404550
R
G
- Ohms
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 720V
I
C
= 100A
50A
25A
I
C
= 25A
50A
100A
Fig. 12. Dependence of Turn-off
Switching Time
on I
C
150
200
250
300
350
400
450
500
550
600
20 30 40 50 60 70 80 90 100
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - -
R
G
= 5Ω, V
GE
= 15V
V
CE
= 720V
T
J
= 125
º
C
T
J
= 25
º
C
© 2006 IXYS All rights reserved
Fig. 14. Gate Charge
0
1.5
3
4.5
6
7.5
9
10.5
12
13.5
15
0 20 40 60 80 100 120 140
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 450V
I
C
= 50A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-off
Switching Time on Temperature
150
200
250
300
350
400
450
500
550
600
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
R
G
=
5
Ω
V
GE
=
15 V
V
CE
=
720V
I
C
= 100A
50A
25A
I
C
= 25A
50A
100A
Fig. 16. Re ve r s e -Bias Saf e
Operating Area
0
10
20
30
40
50
60
70
80
90
100
110
100 200 300 400 500 600 700 800 900
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 10Ω
dV/dT < 10V/ns
Fig. 17. Maxim um Transient Therm al Resistance
0.01
0.1
1
0.1 1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
200 600 10000 400 800
120
140
160
180
200
220
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
V
FR
di
F
/dt
V
200 600 10000 400 800
0
10
20
30
40
50
60
100 1000
0
1
2
3
4
5
01234
0
10
20
30
40
50
60
70
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/μs
A
V
μC
A/μs
A/μs
t
rr
ns
t
fr
Z
thJC
A/μs
μs
2
Fig. 20. Peak reverse current I
RM
versus -di
F
/dt
Fig. 19. Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 18. Forward current I
F
versus V
F
Q
r
I
RM
Fig. 21. Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 22. Recovery time t
rr
versus -di
F
/dt Fig. 23. Peak forward voltage V
FR
and
t
fr
versus di
F
/dt
t
fr
V
FR
Fig. 24 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.465 0.0052
2 0.179 0.0003
3 0.256 0.0397
T
VJ
= 100°C
V
R
= 600V
I
F
= 60A
I
F
= 30A
I
F
=15A
T
VJ
= 100°C
I
F
= 30A
I
F
= 60A
I
F
= 30A
I
F
=15A
T
VJ
= 100°C
V
R
= 600V
T
VJ
= 100°C
V
R
= 600V
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 25°C
T
VJ
=100°C
T
VJ
=150°C
P1-P3P4-P6P7-P7

IXGH50N90B2D1

Mfr. #:
Buy IXGH50N90B2D1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 50 Amps 900V 2.7 Rds
Lifecycle:
New from this manufacturer.
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