IXGK50N90B2D1 Datasheet IXGH50N90B2D1, IXGK50N90B2D1 | P1-P3

V

CES

= 900 V

I

C25

= 75 A

V

CE(sat)

= 2.7 V

t

fi typ

= 200 ns

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 900 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MΩ 900 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C (limited by leads) 75 A

I

C110

T

C

= 110°C50A

I

CM

T

C

= 25°C, 1 ms 200 A

SSOA V

GE

= 15 V, T

VJ

= 125°C, R

G

= 10 Ω I

CM

= 100 A

(RBSOA) Clamped inductive load @

≤ 600V

P

C

T

C

= 25°C 400 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

M

d

Mounting torque (TO-247, TO-264) 1.13/10Nm/lb.in.

F

C

Mounting force (PLUS247) 20..120 / 4.5..25 N/lb

Weight TO-247 6 g

TO-264 10 g

PLUS247 6 g

DS99393(01/06)

G = Gate C = Collector

E = Emitter TAB = Collector

Features



High frequency IGBT



High current handling capability



MOS Gate turn-on

- drive simplicity

Applications



PFC circuits



Uninterruptible power supplies (UPS)



Switched-mode and resonant-mode

power supplies



AC motor speed control



DC servo and robot drives



DC choppers

Advantages



High power density



Very fast switching speeds for high

frequency applications

HiPerFAST

TM

IGBT with Fast

Diode

IXGH 50N90B2D1

IXGK 50N90B2D1

IXGX 50N90B2D1

C (TAB)

G

C

E

TO-247 (IXGH)

B2-Class High Speed IGBT

with Fast Diode

S

G

D

C (TAB)

G

C

E

PLUS247 (IXGX)

TO-264 (IXGK)

Preliminary Data Sheet

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) min. typ. max.

V

GE(th)

I

C

= 250 μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

50 μA

V

GE

= 0 V T

J

= 150°C1mA

I

GES

V

CE

= 0 V, V

GE

= ± 20 V ± 100 nA

V

CE(sat)

I

C

= I

C110

, V

GE

= 15 V, Note 1 2.2 2.7 V

T

J

= 125°CV

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 50N90B2D1 IXGK 50N90B2D1

IXGX 50N90B2D1

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) min. typ. max.

g

fs

I

C

= I

C110

; V

CE

= 10 V, Note 1 25 40 S

C

ies

2500 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 205 pF

C

res

75 pF

Q

g

135 nC

Q

ge

I

C

= I

C110

, V

GE

= 15 V, V

CE

= 0.5 V

CES

23 nC

Q

gc

50 nC

t

d(on)

20 ns

t

ri

28 ns

t

d(off)

350 500 ns

t

fi

200 ns

E

off

4.7 7.5 mJ

t

d(on)

20 ns

t

ri

28 ns

E

on

1.5 mJ

t

d(off)

400 ns

t

fi

420 ns

E

off

8.7 mJ

R

thJC

0.31 K/W

R

thCH

0.21 K/W

Inductive load

I

C

= I

C110

, V

GE

= 15 V

V

CE

= 720 V, R

G

= R

off

= 5 Ω

Inductive load, T

J

= 125

°°

°C

I

C

= I

C110

, V

GE

= 15 V

V

CE

= 720 V, R

G

= R

off

= 5 Ω

Diode

Symbol Conditions Maximum Ratings

I

F25

T

C

= 115°C 30 A

Symbol Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified ) min. typ. max.

V

F

I

F

= 30 A; Note 1 2.5 2.75 V

T

VJ

= 150°C 1.8 V

I

RM

I

F

= 10 A; di

F

/dt = -100 A/μs; T

VJ

= 100°C 5.5 11.5 A

t

rr

V

R

= 100 V; V

GE

= 0 V 200 ns

R

thJC

0.9 K/W

R

thCH

with heat transfer paste 0.25 K/W

Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

50

100

150

200

250

300

03691215

V

C E

- Volts

I

C

- Amperes

V

GE

= 15V

7V

9V

11V

13 V

5V

Fig. 3. Output Characteristics

@ 125

º

C

0

10

20

30

40

50

60

70

80

90

100

00.511.522.533.544.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 1. Output Characteristics

@ 25

º

C

0

10

20

30

40

50

60

70

80

90

100

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

V

C E

- Volts

I

C

- Amperes

V

GE

=15V

13V

11V

9V

5V

7V

Fig. 4. Dependence of V

CE(sat )

on

Temperature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

C E (sat)

- Normalized

I

C

= 50A

I

C

= 25A

V

GE

= 15V

I

C

= 100A

Fig. 5. Collector-to-Em itter Voltage

vs. Gate-to-Emitter voltage

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

5 6 7 8 9 10 11 12 13 14 15

V

G E

- Volts

V

C E

- Volts

T

J

= 25

º

C

I

C

= 100A

50A

25A

Fig. 6. Input Adm ittance

0

25

50

75

100

125

150

175

200

225

250

3456789101112

V

G E

- Volts

I

C

- Amperes

T

J

= -40

º

C

25

º

C

125

º

C

IXGH 50N90B2D1 IXGK 50N90B2D1

IXGX 50N90B2D1

IXGK50N90B2D1

IXGK50N90B2D1

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