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FST8360M

P1-P2
V
RRM
= 20 V - 100 V
I
F
= 80 A
Features
• High Surge Capability D61-3M Package
• Types up to 100V V
RRM
Parameter Symbol FST8345M FST8360M Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
45 60 V
Silicon Power
Schottk
y
Diode
FST8345M thru FST83100M
FST83100M
80
FST8380M
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Conditions
100
pp g
RMS reverse voltage
V
RMS
32 42 V
DC blocking voltage
V
DC
45 60 V
Continuous forward current
I
F
80 80 A
Operating temperature
T
j
-40 to 175 -40 to 175 °C
Storage temperature
T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol FST8345M FST8360M Unit
Diode forward voltage 0.65 0.75
1.5 1.5
500 500
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.2 1.2 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
500
A800
V
R
= 20 V, T
j
= 25 °C
I
F
= 80 A, T
j
= 25 °C
T
C
≤ 110 °C
Conditions
56
800 800
-40 to 175
80 80
800
-40 to 175
FST83100M
1.5 1.5
FST8380M
1.2
V
R
= 20 V, T
j
= 125 °C
1.2
0.84 0.84
500
mA
V
-40 to 175 -40 to 175
T
C
= 25 °C, t
p
= 8.3 ms
70
10080
www.genesicsemi.com
1
FST8345M thru FST83100M
www.genesicsemi.com
2
P1-P2

FST8360M

Mfr. #:
Buy FST8360M
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 60V 80A Schottky Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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