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NZ23C5V6ALT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2009
October, 2016 − Rev. 1
1 Publication Order Number:
NZ23C5V6AL/D
NZ23C5V6ALT1G
24 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
This dual monolithic silicon Zener diodes is designed for applications
requiring transient overvoltage protection capability. This is intended
for use in voltage and ESD sensitive equipment such as computers,
printers, business machines, communication systems, medical
equipment and other applications. The dual junction common anode
design protects two separate lines using only one package. This device
is ideal for situations where board space is at a premium.
Features
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 3 V
• Standard Zener Breakdown Voltage Range − 5.6 V
• Peak Power − 24 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
• ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 0.1 mA
• Flammability Rating UL 94 V−0
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
SOT−23
CASE 318
STYLE 12
1
3
2
1
2
3
MARKING
DIAGRAM
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
1
5V6MG
G
5V6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Device
Package
Shipping
†
ORDERING INFORMATION
NZ23C5V6ALT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
NZ23C5V6ALT1G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ T
L
≤ 25°C P
pk
24 W
Total Power Dissipation on FR−5 Board (Note 2) @ T
A
= 25°C
Derate above 25°C
°P
D
° 225
1.8
°mW°
mW/°C
Thermal Resistance Junction−to−Ambient
R
q
JA
556 °C/W
Total Power Dissipation on Alumina Substrate (Note 3) @ T
A
= 25°C
Derate above 25°C
°P
D
° 300
2.4
°mW
mW/°C
Thermal Resistance Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature Range T
J
, T
stg
− 55 to +150 °C
Lead Solder Temperature − Maximum (10 Second Duration) T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 5 and derate above T
A
= 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
QV
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA) 24 WATTS
Device
Device
Marking
V
RWM
I
R
@
V
RWM
Breakdown Voltage
Max Zener
Impedance (Note 5)
V
C
@ I
PP
(Note 6)
QV
BR
V
BR
(Note 4) (V) @ I
T
Z
ZT
@
20mA
Z
ZK
@ I
ZK
V
C
I
PP
Volts
mA
Min Nom Max mA
W W
mA V A
mV/5C
NZ23C5V6ALT1G 5V6 1.0 0.1 5.2 5.6 6.0 5.0 11 1600 0.25 8.0 3.0 1.26
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
5. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
Z(AC)
= 0.1 I
Z(DC)
, with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 5 and derate per Figure 6
NZ23C5V6ALT1G
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3
TYPICAL CHARACTERISTICS
−40 +50
18
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (°C)
+100 +150
15
12
9
6
3
0
−40 +25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+85 +12
5
100
10
1
0.1
0.01
BREAKDOWN VOLTAGE (VOLTS)
(V
BR
@ I
T
)
I
R
(nA)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve is unidirectional mode,
lower curve is bidirectional mode)
0 25 50 75 100 125 150 17
5
300
250
200
150
100
50
0
Figure 4. Steady State Power Derating Curve
TEMPERATURE (°C)
FR−5 BOARD
ALUMINA SUBSTRATE
01 23
320
280
240
160
120
40
0
C, CAPACITANCE (pF)
BIAS (V)
200
80
5.6 V
P
D
, POWER DISSIPATION (mW)
P1-P3P4-P6

NZ23C5V6ALT1G

Mfr. #:
Buy NZ23C5V6ALT1G
Manufacturer:
ON Semiconductor
Description:
ESD Suppressors / TVS Diodes ZEN SOT23 REG .225W
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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