OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-30APF12-M3

P1-P3P4-P6P7-P9
VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
1
Document Number: 93705
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Soft Recovery Rectifier Diode, 30 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-30EPF1... and VS-30APF1... soft recovery rectifier
series has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package TO-247AC modified (2 pins), TO-247AC
I
F(AV)
30 A
V
R
1000 V, 1200 V
V
F
at I
F
1.41 V
I
FSM
350 A
t
rr
95 ns
T
J
max. 150 °C
Diode variation Single die
Snap factor 0.6
TO-247AC modified
TO-247AC
1
2
3
1
2
3
VS-30APF1...VS-30EPF1...
2
1
3
Cathode
Anode
Base
cathode
2, 4
Anode
1
Anode
3
Base
cathode
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 30 A
V
RRM
1000 to 1200 V
I
FSM
350 A
V
F
30 A, T
J
= 25 °C 1.41 V
t
rr
1 A, 100 A/μs 95 ns
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-30EPF10PbF, VS-30APF10PbF
VS-30EPF10-M3, VS-30APF10-M3
1000 1100
6
VS-30EPF12PbF, VS-30APF12PbF
VS-30EPF12-M3, VS-30APF12-M3
1200 1300
VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
2
Document Number: 93705
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 95 °C, 180° conduction half sine wave 30
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 300
10 ms sine pulse, no voltage reapplied 350
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 450
A
2
s
10 ms sine pulse, no voltage reapplied 636
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 6360 A
2
s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
30 A, T
J
= 25 °C 1.41 V
Forward slope resistance r
t
T
J
= 150 °C
10.09 m
Threshold voltage V
F(TO)
0.992 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 6
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 30 A
pk
25 A/μs
25 °C
450 ns
Reverse recovery current I
rr
6.1 A
Reverse recovery charge Q
rr
2.16 μC
Snap factor S Typical 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.8
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
40
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.2
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style TO-247AC modified
30EPF10
30EPF12
Case style TO-247AC
30APF10
30APF12
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
t
a
t
b
VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
3
Document Number: 93705
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
150
0
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
5
100
10 35
120
130
110
15
25
140
80
30
20
Conduction angle
30.PF.. Series
R
thJC
(DC) = 0.8 K/W
90
30°
60°
90°
120°
180°
Ø
150
030
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
40
110
50
120
80
10 20
130
140
30.PF.. Series
R
thJC
(DC) = 0.8 K/W
Ø
Conduction period
30°
60°
90°
120°
180°
DC
100
90
10
0
60
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
25
40
35
50
30
10 155
20
Conduction angle
30.PF.. Series
T
J
= 150 °C
RMS limit
180°
120°
90°
60°
30°
30
20
Ø
10
0
80
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
40
50
20
10 30
30
60
20
40
70
50
RMS limit
Ø
Conduction period
30.PF.. Series
T
J
= 150 °C
180°
120°
90°
60°
30°
DC
350
50
1 10 100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
200
100
150
250
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
30.PF.. Series
300
150
50
0.01 0.1
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
300
100
200
250
350
400
1
30.PF.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
P1-P3P4-P6P7-P9

VS-30APF12-M3

Mfr. #:
Buy VS-30APF12-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers New Input Diodes - TO-247-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet