FMMTL618TA

C

B

E

SOT23 NPN SILICON PLANAR HIGH GAIN

MEDIUM POWER TRANSISTOR

ISSUE 1 – NOVEMBER 1997

FEATURES

Very low equivalent on-resistance; R

CE(sat)

=140mΩ at 1.25A

COMPLEMENTARY TYPE – FMMTL718

PARTMARKING DETAIL – L68

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

60 V

Collector-Emitter Voltage V

CEO

20 V

Emitter-Base Voltage V

EBO

5V

Continuous Collector Current I

C

1.25 A

Peak Pulse Current I

CM

4A

Base Current I

B

200 mA

Power Dissipation at T

amb

=25°C P

tot

500 mW

Operating and Storage Temperature Range T

j

:T

stg

-55 to +150 °C

FMMTL618

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

60 105 V

I

C

=100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

20 30 V I

C

=10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

58.5 V

I

E

=100µA

Collector Cut-Off Current I

CBO

10 nA V

CB

=16V

Emitter Cut-Off Current I

EBO

10 nA V

EB

=4V

Collector Cut-Off Current I

CES

10 nA V

CE

=16V

Collector-Emitter

Saturation Voltage

V

CE(sat)

18

80

130

170

260

35

160

200

280

350

mV

mV

mV

mV

mV

I

C

=100mA, I

B

=10mA*

I

C

=500mA, I

B

=25mA*

I

C

=1A, I

B

=100mA*

I

C

=1.25A, IB=100mA*

I

C

=2A, I

B

=200mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

1000 1100 mV I

C

=1.25A, I

B

=100mA*

Base-Emitter

Turn On Voltage

V

BE(on)

850 1000 mV I

C

=1.25A, V

CE

=2V*

Static Forward

Current Transfer Ratio

h

FE

200

300

250

200

100

50

400

440

400

300

190

100

I

C

=10mA, V

CE

=2V

I

C

=200mA, V

CE

=2V*

I

C

=500mA, V

CE

=2V*

I

C

=1A, V

CE

=2V*

I

C

=2A, V

CE

=2V*

I

C

=3A, V

CE

=2V*

Transition Frequency f

T

195 MHz I

C

=50mA, V

CE

=10V

f=100MHz

Collector-Base

Breakdown Voltage

C

obo

912pFV

CB

=10V, f=1MHz

Switching times t

on

t

off

72

388

ns

ns

I

C

=1A, V

CC

=10V

I

B1

=-I

B2

=10mA

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

FMMTL618

FMMTL618

1mA

1mA

1mA

100m

1mA

1m

I

C

- Collector Current (A)

VCE(sat) v IC

0

V

CE(sat)

- (V)

IC/IB=10

IC/IB=20

IC/IB=50

+25°C

-55°C

h

FE

- Typical Gain

+100°C

0

IC - Collector Current (A)

hFE v IC

+25°C

+100°C

V

BE(on)

- (V)

-55°C

0

IC - Collector Current (A)

VBE(on) v IC

+100°C

VCE(sat) - (V)

+25°C

0

I

C

- Collector Current (A)

VCE(sat) v IC

+100°C

VBE(sat) - (V)

+25°C

0

IC - Collector Current (A)

VBE(sat) v IC

1s

100ms

IC - Collector Current (A)

DC

10m

V

CE

- Collector Emitter Voltage (V)

Safe Operating Area

10ms

1ms

100us

VCE=2V

+25°C

-55°C

IC/IB=10

VCE=2V

-55°C

IC/IB=10

10mA 100mA 1A 10A

300

600

100m

200m

300m

10mA 100mA 1A 10A

10m 100m 1A 10A

100m

200m

300m

10mA 100mA 1A 10A

0.2

0.4

0.6

0.8

1.0

10mA 100mA 1A 10A

0.2

0.4

0.6

0.8

1.0

110100

100m

1A

10A

TYPICAL CHARACTERISTICS

FMMTL618TA

Mfr. #:

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT NPN Low Saturation

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

FMMTL618TA