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MGA-13216-BLKG

P1-P3P4-P6P7-P9P10-P11
MGA-13216
High Gain, High Linearity, Very Low Noise Amplier
Data Sheet
Description
Avago Technologies’ MGA-13216 is a two stage, easy-to-
use GaAs MMIC Low Noise Amplier (LNA). The LNA has
low noise with good input return loss and high linearity
achieved through the use of Avago Technologies’ propri-
etary 0.25 P m GaAs Enhancement-mode pHEMT process.
Minimum matching needed for input, output and the
inter-stage between the two LNA.
It is designed for optimum use between 1.5 GHz to 2.5
GHz. For optimum performance at lower frequency from
400 MHz to 1.5 GHz, the MGA-13116 is recommended.
Both MGA-13216 & MGA-13116 share the same package
and pinout conguration.
Pin Conguration and Package Marking
4.0 x 4.0 x 0.85 mm
3
16-lead QFN
Note:
Package marking provides orientation and identication
“13216” = Device Part Number
“YYWW” = Work Week and Year of Manufacture
“XXXX” = Lot Number
Features
x Optimum frequency of operation 1.5 GHz – 2.5 GHz
x Very low noise gure
x High gain
x High linearity performance
x Excellent isolation
x GaAs E-pHEMT Technology
[1]
x Low cost small package size: 4.0 x 4.0 x 0.85 mm
3
Specications
1.95 GHz; Q1: 5 V, 53 mA (typ) Q2: 5 V, 122 mA (typ)
x 0.61 dB Noise Figure
x 35.8 dB Gain
x 46 dB RFoutQ1 to RFinQ2 Isolation
x 40.5 dBm Output IP3
x 23.6 dBm Output Power at 1dB gain compression
Applications
x Low noise amplier for cellular infrastructure including
GSM, CDMA, and W-CDMA.
x Other very low noise applications.
Simplied Schematic
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V
ESD Human Body Model = 650 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Notes: Enhancement mode technology employs positive gate bias,
thereby eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
C10
R2
L1
C8
R3
C9
R4
C7
L2
C2
C3
C4
C5
C1
C6
L3
R1
15
12
14
11
13
9
8765
4
2
16
103
1
Q1bias
Vdd1
Vdd2
Q1 Q2
RFOUT
RFIN
AVAGO
13216
YYWW
XXXX
8
7
6
5
13
14
15
16
1
2
3
4
12
11
10
9
GND
Pin 2
Pin 3
Pin 10
Pin 11
Pin 13
Pin 16
TOP VIEW BOTTOM VIEW
All other pins NC
Not Connected
Vbias
RFinQ1
RFoutQ2
RFoutQ2
RFinQ2
RFoutQ1
2
MGA-13216 Absolute Maximum Rating
[1]
TA = 25° C
Symbol Parameter Units Absolute Maximum
Vdd1 Device Voltage V 5.5
Vdd2 Device Voltage V 5.5
Idd1 Q1 Drain Current mA 90
P
d
Power Dissipation
(2)
W 1.11
P
in,max
CW RF Input Power dBm 20
T
j,max
Junction Temperature °C 150
T
stg
Storage Temperature °C -65 to 150
Thermal Resistance
[3]
(V
dd1
=5.0V, I
dd1
=53mA, V
dd2
=5.0V,
I
dd2
=122mA) T
jc
= 40.3° C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Board temperature (T
c
) is 25° C. For T
c
>100° C,
derate the device power at 24.8 mW per °C
rise in board temperature adjacent to pack-
age bottom.
3. Thermal resistance measured using Infrared
Measurement Technique.
Electrical Specications
[1]
RF performance at Vdd1 = 5 V, Vdd2 = 5 V, 1.95 GHz, T
A
= 25° C, measured on the demo board for 1.95 GHz matching.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Idd1 Current at Q1 mA 39 53 67
Idd2 Current at Q2 mA 101 122 143
NF Noise Figure dB – 0.61 0.9
Gain Gain dB 34.3 35.8 37.3
OIP3
[2]
Output Third Order Intercept Point dBm 37 40.5 –
OP1dB Output Power at 1 dB Gain Compression dBm 22.3 23.6 –
IRL
Input Return Loss, 50 : source
dB – -18 –
ORL
Output Return Loss, 50 : load
dB – -10.7 –
|S12| Reverse Isolation dB – 55 –
|ISOL
1-2
| Isolation between Q1’s Output pin & Q2’s Input pin dB – 46 –
Notes:
1. Measurements obtained using demo board described in Figure 7 with component list in Table 1. Input and Output trace loss is not de-embedded
from the measurement.
2. OIP3 test condition: f
tone1
= 1.95 GHz, f
tone2
= 1.951 GHz with input power of -27 dBm per tone.
3. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
3
Product consistency Distribution Charts
[1,2]
Figure 1. Idd1 @ 1. 95 GHz, Vdd1 = 5 V, LSL = 39 mA, Nominal = 53 mA,
USL = 67 mA
Figure 3. Noise Figure @ 1. 95 GHz, Vdd1 = 5 V, Vdd2 = 5 V,
Nominal = 0.61 dB, USL = 0.9 dB
Figure 4. Gain @ 1. 95 GHz, Vdd1 = 5 V, Vdd2 = 5 V, LSL = 34.3 dB,
Nominal = 35.8 dB, USL = 37.3 dB
Figure 5. OIP3 @ 1. 95 GHz, Vdd1 = 5 V, Vdd2 = 5 V, LSL = 37 dBm,
Nominal = 40.5 dBm
Figure 6. OP1dB @ 1. 95 GHz, Vdd1 = 5 V, Vdd2 = 5 V, LSL = 22.3 dBm,
Nominal = 23.6 dBm
Figure 2. Idd2 @ 1.95 GHz, Vdd2 = 5 V, LSL = 101 mA, Nominal = 122 mA,
USL = 143 mA
Notes:
1. Data sample size is 9193 samples taken from 3 dierent wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
2. Measurements are made on production test board which represents a trade-o between optimal Gain, NF, OIP3 and OP1dB. Circuit losses have
been de-embedded from actual measurements.
40 50 60
LSL USL
0.4 0.5 0.7 0.80.6 0.9
USL
35 36 37
LSL USL
3837 39 4140
4342
LSL
23 2422.5 23.5 24.5
LSL
LSL USL
100 110 120 130 140
P1-P3P4-P6P7-P9P10-P11

MGA-13216-BLKG

Mfr. #:
Buy MGA-13216-BLKG
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Two Stage LNA 1.5-2.5 GHz
Lifecycle:
New from this manufacturer.
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