SI4834CDY-T1-E3 Datasheet SI4834CDY-T1-GE3, SI4834CDY-T1-E3 | P1-P3

Vishay Siliconix

Si4834CDY

Document Number: 68790

S09-2109-Rev. B, 12-Oct-09

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• 100 % R

g

Tested

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Notebook Logic dc-to-dc

• Low Current dc-to-dc

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)

I

D

(A)

a, e

Q

g

(Typ.)

Channel-1 30

0.020 at V

GS

= 10 V 8.0

7.3

0.025 at V

GS

= 4.5 V 8.0

Channel-2 30

0.020 at V

GS

= 10 V 8.0

7.3

0.025 at V

GS

= 4.5 V 8.0

SCHOTTKY PRODUCT SUMMARY

V

DS

(V)

V

SD

(V)

Diode Forward Voltage

I

F

(A)

a

30 0.51 V at 1.0 A 2.0

S

1

D

1

G

1

D

1

S

2

D

2

G

2

D

2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4834CDY-T1-E3 (Lead (Pb)-free)

Si4834CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

D

1

G

1

S

1

Schottky

Diode

N-Channel MOSFET

D

2

G

2

S

2

Notes:

a. Based on T

C

= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).

e. Package limited.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Channel-1 Channel-2 Unit

Drain-Source Voltage

V

DS

30 30

V

Gate-Source Voltage

V

GS

± 20 ± 20

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

8.0

e

8.0

e

A

T

C

= 70 °C

7.1 7.1

T

A

= 25 °C

7.5

b, c

7.5

b, c

T

A

= 70 °C

5.8

b, c

5.8

b, c

Pulsed Drain Current (10 µs Pulse Width)

I

DM

30 30

Source-Drain Current Diode Current

T

C

= 25 °C

I

S

2.6 2.6

T

A

= 25 °C

1.8

b, c

1.8

b, c

Pulsed Source-Drain Current

I

SM

30 30

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

10 10

Single Pulse Avalanche Energy

E

AS

55

mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

2.9 2.9

W

T

C

= 70 °C

1.8 1.8

T

A

= 25 °C

2

b, c

2

b, c

T

A

= 70 °C

1.2

b, c

1.2

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol

Channel-1 Channel-2

Unit

Typ. Max. Typ. Max.

Maximum Junction-to-Ambient

b, d

t ≤ 10 s

R

thJA

52 62.5 52 62.5

°C/W

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

35 43 35 43

www.vishay.com

2

Document Number: 68790

S09-2109-Rev. B, 12-Oct-09

Vishay Siliconix

Si4834CDY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.

Typ.

a

Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 1 mA

Ch-1 30

V

GS

= 0 V, I

D

= 1 mA

Ch-2 30

V

DS

Temperature Coefficient ΔV

DS

/T

J

I

D

= 250 µA

Ch-2 32

mV/°C

V

GS(th)

Temperature Coefficient ΔV

GS(th)

/T

J

I

D

= 250 µA

Ch-2 - 6

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 1 mA

Ch-1 1 3

V

DS

= V

GS

, I

D

= 1 mA

Ch-2 1 3

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

Ch-1 100

nA

V

DS

= 0 V, V

GS

= ± 20 V

Ch-2 100

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 30 V, V

GS

= 0 V

Ch-1 0.016 0.10

mA

V

DS

= 30 V, V

GS

= 0 V

Ch-2 0.001

V

DS

= 30 V, V

GS

= 0 V, T

J

= 100 °C

Ch-1 1.1 10

V

DS

= 30 V, V

GS

= 0 V, T

J

= 100 °C

Ch-2 0.025

On-State Drain Current

b

I

D(on)

V

DS

= 5 V, V

GS

= 10 V

Ch-1 20

A

V

DS

= 5 V, V

GS

= 10 V

Ch-2 20

Drain-Source On-State Resistance

b

R

DS(on)

V

GS

= 10 V, I

D

= 8 A

Ch-1 0.0156 0.020

Ω

V

GS

= 10 V, I

D

= 8 A

Ch-2 0.0156 0.020

V

GS

= 4.5 V, I

D

= 5 A

Ch-1 0.019 0.025

V

GS

= 4.5 V, I

D

= 5 A

Ch-2 0.019 0.025

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 8 A

Ch-1 29

S

V

DS

= 15 V, I

D

= 8 A

Ch-2 29

Dynamic

a

Input Capacitance

C

iss

Channel-1

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

Channel-2

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

Ch-1 950

pF

Ch-2 950

Output Capacitance

C

oss

Ch-1 185

Ch-2 155

Reverse Transfer Capacitance

C

rss

Ch-1 65

Ch-2 65

Total Gate Charge

Q

g

V

DS

= 15 V, V

GS

= 10 V, I

D

= 8 A

Ch-1 16.5 25

nC

V

DS

= 15 V, V

GS

= 10 V, I

D

= 8 A

Ch-2 16.5 25

Channel-1

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 8 A

Channel-2

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 8 A

Ch-1 7.3 11

Ch-2 7.3 11

Gate-Source Charge

Q

gs

Ch-1 2.7

Ch-2 2.7

Gate-Drain Charge

Q

gd

Ch-1 2.1

Ch-2 2.1

Gate Resistance

R

g

f = 1 MHz

Ch-1 0.2 1.2 2.4

Ω

Ch-2 0.2 1.2 2.4

Document Number: 68790

S09-2109-Rev. B, 12-Oct-09

www.vishay.com

3

Vishay Siliconix

Si4834CDY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.

Typ.

a

Max. Unit

Dynamic

a

Tu r n - On D el ay Ti m e

t

d(on)

Channel-1

V

DD

= 15 V, R

L

= 3 Ω

I

D

≅ 5 A, V

GEN

= 10 V, R

g

= 1 Ω

Channel-2

V

DD

= 15 V, R

L

= 3 Ω

I

D

≅ 5 A, V

GEN

= 10 V, R

g

= 1 Ω

Ch-1 10 20

ns

Ch-2 9 18

Rise Time

t

r

Ch-1 10 20

Ch-2 11 20

Turn-Off Delay Time

t

d(off)

Ch-1 18 35

Ch-2 18 35

Fall Time

t

f

Ch-1 9 18

Ch-2 8 16

Tu r n - On D el ay Ti m e

t

d(on)

Channel-1

V

DD

= 15 V, R

L

= 3 Ω

I

D

≅ 5 A, V

GEN

= 4.5 V, R

g

= 1 Ω

Channel-2

V

DD

= 15 V, R

L

= 3 Ω

I

D

≅ 5 A, V

GEN

= 4.5 V, R

g

= 1 Ω

Ch-1 17 35

Ch-2 17 35

Rise Time

t

r

Ch-1 12 24

Ch-2 12 24

Turn-Off Delay Time

t

d(off)

Ch-1 19 35

Ch-2 18 35

Fall Time

t

f

Ch-1 10 20

Ch-2 10 20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

Ch-1 2.6

A

Ch-2 2.6

Pulse Diode Forward Current

a

I

SM

Ch-1 30

Ch-2 30

Body Diode Voltage

V

SD

I

S

= 1 A

Ch-1 0.46 0.51

V

I

S

= 1 A

Ch-2 0.74 1.1

Body Diode Reverse Recovery Time

t

rr

Channel-1

I

F

= 5 A, dI/dt = 100 A/µs, T

J

= 25 °C

Channel-2

I

F

= 5 A, dI/dt = 100 A/µs, T

J

= 25 °C

Ch-1 17 34

ns

Ch-2 17 34

Body Diode Reverse Recovery Charge

Q

rr

Ch-1 7 14

nC

Ch-2 9 18

Reverse Recovery Fall Time

t

a

Ch-1 9

ns

Ch-2 10

Reverse Recovery Rise Time

t

b

Ch-1 8

Ch-2 7

SI4834CDY-T1-E3

SI4834CDY-T1-E3

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