V
RRM
= 200 V - 1000 V
I
F
=150 A
Features
• High Surge Capability DO-8 Package
• Types up to 1000 V V
RRM
Parameter Symbol 150K(R)20
150K(R)40A 150K(R)60
Unit
Re
etitive
eak reverse volta
e
V
RRM
200 400 600 V
Conditions
1000
150K(R)20A thru 150K(R)100A
150K(R)100
800
150K(R)80A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
Diode
2
1
1
2
2
1
2
1
Standard
"R"Orientation
DC blocking voltage
V
DC
200 400 600 V
Continuous forward current
I
F
150 150 150 A
I
2
t for fusing
I
2
t
t = 8.3ms 58000 58000 58000
A
2
sec
Operating temperature
T
j
-40 to 200 -40 to 200 -40 to 200 °C
Storage temperature
T
stg
-40 to 200 -40 to 200 -40 to 200 °C
Parameter Symbol 150K(R)20
150K(R)40A 150K(R)60
Unit
Diode forward voltage 1.33 1.33 1.33
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
0.25 0.25 0.25 °C/W
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
3740
T
C
= 25 °C, t
p
= 8.3 ms
1000800
-40 to 200
150K(R)100
150K(R)80A
0.25 0.25
1.33 1.33 V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
35
I
F
= 150 A, T
j
= 25 °C
T
C
≤ 110 °C
Conditions
3740 3740
-40 to 200
150 150
A3740
Reverse current
I
R
V
F
3740
V
R
= V
RRM
, T
j
= 175 °C
35 35 32 24 mA
58000 58000
-40 to 200 -40 to 200
www.genesicsemi.com
1
