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BTA216B-600E,118

P1-P3P4-P6P7-P9
NXP Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
R
th j-a
Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA216B- ...D ...E ...F
I
GT
Gate trigger current
2
V
D
= 12 V; I
T
= 0.1 A
T2+ G+ - 5 10 25 mA
T2+ G- - 5 10 25 mA
T2- G- - 5 10 25 mA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A mA
T2+ G+ - 15 25 30 mA
T2+ G- - 25 30 40 mA
T2- G- - 25 30 40
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A - 15 25 30 mA
...D, E, F
V
T
On-state voltage I
T
= 20 A - 1.5 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 1.5 V
V
D
= 400 V; I
T
= 0.1 A; 0.25 - V
T
j
= 125 ˚C
I
D
Off-state leakage current V
D
= V
DRM(max)
; T
j
= 125 ˚C - 0.5 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA216B- ...D ...E ...F
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
;306070-V/µs
off-state voltage T
j
= 110 ˚C; exponential
waveform; gate open circuit
dI
com
/dt Critical rate of change of V
DM
= 400 V; T
j
= 125 ˚C; 2.5 6.2 18 - A/ms
commutating current I
T(RMS)
= 16 A;
dV
com
/dt = 10V/µs; gate
open circuit
dI
com
/dt Critical rate of change of V
DM
= 400 V; T
j
= 125 ˚C; 12 20 50 - A/ms
commutating current I
T(RMS)
= 16 A;
dV
com
/dt = 0.1V/µs; gate
open circuit
2 Device does not trigger in the T2-, G+ quadrant.
April 2002 2 Rev 2.000
NXP Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤ 99˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 5 10 15 20
0
5
10
15
20
25
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
119
113
107
101
95
1
-50 0 50 100 150
0
5
10
15
20
BT139
99 C
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms
10
100
1000
T / s
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01 0.1 1 10
0
10
20
30
40
50
surge duration / s
IT(RMS) / A
1 10 100 1000
0
50
100
150
Number of cycles at 50Hz
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
April 2002 3 Rev 2.000
NXP Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Mimimum, critical rate of change of
commutating current dI
com
/dt versus junction
temperature, dV
com
/dt = 10V/µs.
0
0.5
1
1.5
2
2.5
3
-50 0 50 100 150
T2+ G+
T2+ G-
T2- G-
Tj/°C
IGT(Tj)
IGT(25°C)
0 0.5 1 1.5 2 2.5 3
0
10
20
30
40
50
BT139
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.195 V
Rs = 0.018 Ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
t
p
P
t
D
unidirectional
bidirectional
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25C)
1
10
100
20 40 60 80 100 120 140
F TYPE
E TYPE
D TYPE
Tj/˚C
dIcom/dt (A/ms)
April 2002 4 Rev 2.000
P1-P3P4-P6P7-P9

BTA216B-600E,118

Mfr. #:
Buy BTA216B-600E,118
Manufacturer:
WeEn Semiconductors
Description:
Triacs TAPE13 TRIAC
Lifecycle:
New from this manufacturer.
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