VS-MURB2020CT-1-M3

VS-MURB2020CT-M3, VS-MURB2020CT-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
1
Document Number: 96391
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 2 x 10 A FRED Pt
®
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 10 A
V
R
200 V
V
F
at I
F
0.85 V
t
rr
35 ns
T
J
max. 175 °C
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
Anode
Base
common
cathode
2
Anode
1
3
2
Common
cathode
1
2
Anode
Base
common
cathode
2
Anode
1
3
2
Common
cathode
2
1
VS-MURB2020CT-M3
VS-MURB2020CT-1-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current
per leg
I
F(AV)
10
A
total device Rated V
R
, T
C
= 145 °C 20
Non-repetitive peak surge current per leg I
FSM
100
Peak repetitive forward current per leg I
FM
Rated V
R
, square wave, 20 kHz, T
C
= 145 °C 20
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 8 A, T
J
= 125 °C - - 0.85
I
F
= 16 A - - 1.15
I
F
= 16 A, T
J
= 125 °C - - 1.05
Reverse leakage current I
R
V
R
= V
R
rated - - 15
μA
T
J
= 150 °C, V
R
= V
R
rated - - 250
Junction capacitance C
T
V
R
= 200 V - 55 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-MURB2020CT-M3, VS-MURB2020CT-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
2
Document Number: 96391
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - - 35
ns
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 19 -
T
J
= 25 °C
I
F
= 10 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-21-
T
J
= 125 °C - 35 -
Peak recovery current I
RRM
T
J
= 25 °C - 1.9 -
A
T
J
= 125 °C - 4.8 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 25 -
nC
T
J
= 125 °C - 78 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction-to-case per leg
R
thJC
--2.5
°C/W
Thermal resistance,
junction-to-ambient per leg
R
thJA
--50
Thermal resistance,
case-to-heatsink
R
thCS
Mounting surface, flat, smooth, and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK (TO-263AB) MURB2020CT
Case style TO-262AA MURB2020CT-1
1
10
0 2.00.4 1.2
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1.6
0.1
0.8
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.1
1
10
100
0 100 150
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (μA)
200 25050
0.001
T
J
= 125 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 100 °C
T
J
= 25 °C
VS-MURB2020CT-M3, VS-MURB2020CT-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
3
Document Number: 96391
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100
1000
1 10 100 1000
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
03
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
69
Square wave (D = 0.50)
Rated V
R
applied
12 15
06
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
39
3
6
15
9
12
12
15
RMS limit

VS-MURB2020CT-1-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200V 2 x 10A IF TO-262AA 100A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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