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STW20NM50

P1-P3P4-P6P7-P8
1/8February 2004
STW20NM50
N-CHANNEL 550V @ Tjmax - 0.20Ω -20ATO-247
MDmesh™ MOSFET
TYPICAL R
DS
(on) = 0.20Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1) I
SD
≤20A, di/dt ≤400A/µs, V
DD
≤ V
(BR)DSS
,T
j
≤ T
JMAX.
TYPE V
DSS
(@Tjmax)
R
DS(on)
I
D
STW20NM50 550V < 0.25Ω 20 A
Symbol Parameter Value Unit
V
GS
Gate- source Voltage ±30 V
I
D
Drain Current (continuous) at T
C
= 25°C
20 A
I
D
Drain Current (continuous) at T
C
= 100°C
12.6 A
I
DM
( )
Drain Current (pulsed) 80 A
P
TOT
Total Dissipation at T
C
= 25°C
214 W
Derating Factor 1.44 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
1
2
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s) - Obsolete Product(s)
STW20NM50
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Rthj-case Thermal Resistance Junction-case Max 0.585 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
10 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
=25°C, I
D
=5A,V
DD
=35V)
650 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
=0 500 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
=MaxRating
1µA
V
DS
= Max Rating, T
C
=125°C
100 µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ±30V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
,I
D
=250µA
345V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 10A
0.20 0.25 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance V
DS
>I
D(on)
xR
DS(on)max,
I
D
= 10A
10 S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
=0
1480 pF
C
oss
Output Capacitance 285 pF
C
rss
Reverse Transfer
Capacitance
34 pF
C
oss eq.
(2) Equivalent Output
Capacitance
V
GS
=0V,V
DS
= 0V to 400V 130 pF
R
G
Gate Input Resistance f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.6 Ω
Obsolete Product(s) - Obsolete Product(s)
3/8
STW20NM50
Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
=10A
R
G
=4.7Ω V
GS
=10V
(see test circuit, Figure 3)
24 ns
t
r
Rise Time 16 ns
Q
g
Total Gate Charge
V
DD
=400V,I
D
=20A,
V
GS
=10V
40 56 nC
Q
gs
Gate-Source Charge 13 nC
Q
gd
Gate-Drain Charge 19 nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
=400V,I
D
=20A,
R
G
=4.7Ω, V
GS
=10V
(see test circuit, Figure 5)
9ns
t
f
Fall Time 8.5 ns
t
c
Cross-over Time 23 ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 20 A
I
SDM
(2)
Source-drain Current (pulsed) 80 A
V
SD
(1)
Forward On Voltage
I
SD
=20A,V
GS
=0
1.5 V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100 A/µs,
V
DD
=100V,T
j
=25°C
(see test circuit, Figure 5)
350
4.6
26
ns
µC
A
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100 A/µs,
V
DD
=100V,T
j
=150°C
(see test circuit, Figure 5)
435
5.9
27
ns
µC
A
Safe Operating Area
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P8

STW20NM50

Mfr. #:
Buy STW20NM50
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 500 Volt 20 Amp
Lifecycle:
New from this manufacturer.
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