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PSMN013-100YSEX

P1-P3P4-P6P7-P9P10-P12P13-P14
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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PSMN013-100YSE
N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56
18 December 2012 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 °C. Part of
NXP's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot-
swap" controllers - robust enough to withstand substantial inrush currents during turn on,
whilst offering a low R
DS(on)
characteristic to keep temperatures down and efficiency up in
continued use. Ideal for telecommunication systems based on a 48 V backplane / supply
rail.
2. Features and benefits
•
Enhanced forward biased safe operating area for superior linear mode operation
•
Very low R
DS(on)
for low conduction losses
3. Applications
•
Electronic fuse
•
Hot swap
•
Load switch
•
Soft start
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
= 100 °C; V
GS
= 10 V; Fig. 1 - - 58 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 2 - - 238 W
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 12
- 11 13 mΩ
Dynamic characteristics
Q
GD
gate-drain charge - 26 - nC
Q
G(tot)
total gate charge
V
GS
= 10 V; I
D
= 20 A; V
DS
= 50 V;
Fig. 14; Fig. 15
- 75 - nC
NXP Semiconductors
PSMN013-100YSE
N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56
PSMN013-100YSE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 18 December 2012 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
Avalanche Ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 82 A;
V
sup
≤ 100 V; R
GS
= 50 Ω; unclamped;
Fig. 3
- - 125 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S source
2 S source
3 S source
4 G gate
mb D mounting base; connected to
drain
mb
1 2 3 4
LFPAK; Power-
SO8 (SOT669)
S
D
G
mbb076
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN013-100YSE LFPAK;
Power-SO8
plastic single-ended surface-mounted package; 4 leads SOT669
7. Marking
Table 4. Marking codes
Type number Marking code
PSMN013-100YSE 13100
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 100 V
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
= 20 kΩ - 100 V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
= 10 V; T
j
= 25 °C; Fig. 1 - 82 A
P1-P3P4-P6P7-P9P10-P12P13-P14

PSMN013-100YSEX

Mfr. #:
Buy PSMN013-100YSEX
Manufacturer:
Nexperia
Description:
MOSFET N-channel 100 V 13 mo FET
Lifecycle:
New from this manufacturer.
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