VS-30BQ015-M3
www.vishay.com
Vishay Semiconductors
Revision: 06-Sep-10
1
Document Number: 93359
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 3.0 A
FEATURES
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• 125 °C T
J
operation (V
R
< 5 V)
• Optimized for OR-ing applications
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-30BQ015-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package SMC
I
F(AV)
3.0 A
V
R
15 V
V
F
at I
F
0.3 V
I
RM
50 mA at 100 °C
T
J
max. 125 °C
Diode variation Single die
E
AS
1.5 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 3.0 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 650 A
V
F
1.0 A
pk
, T
J
= 75 °C 0.30 V
T
J
Range -55 to +125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30BQ015-M3 UNITS
Maximum DC reverse voltage V
R
15
V
Maximum working peak reverse voltage V
RWM
25
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
50 % duty cycle at T
L
= 83 °C, rectangular waveform 3.0
A
50 % duty cycle at T
L
= 78 °C, rectangular waveform 4.0
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
650
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 0.5 A, L = 12 mH 1.5 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.5 A
