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VEMD5510CF-GS15

P1-P3P4-P6P7-P7
VEMD5510CF
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 14-Sep-17
1
Document Number: 84387
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD5510CF is a high speed and high sensitive PIN
photodiode. It is a low profile surface-mount device (SMD)
including the chip with a 7.5 mm
2
sensitive area detecting
visible light much like the human eye. The diode has its
peak sensitivity at 540 nm and a low capacitance.
FEATURES
• Package type: surface-mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4 x 0.9
• Radiant sensitive area (in mm
2
): 7.5
• Supression filter for infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 72 h, MSL 4, according to J-STD-020
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Wearables
• Optical heart rate monitoring
• Ambient light sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.5
(nm)
VEMD5510CF 0.25 ± 65 440 to 620
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD5510CF Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view
VEMD5510CF-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
20 V
Power dissipation T
amb
≤ 25 °C P
V
215 mW
Junction temperature T
j
110 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature According to reflow solder profile Fig. 8 T
sd
260 °C
Thermal resistance junction-to-ambient R
thJA
350 K/W
ESD safety HBM ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses ESD
HBM
≥ 2 kV
VEMD5510CF
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 14-Sep-17
2
Document Number: 84387
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Reverse Light Current vs. Irradiance
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
-0.91.3V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
20 - - V
Reverse dark current V
R
= 10 V, E = 0 I
ro
- 0.2 10 nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
-80-pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
-3040pF
Open circuit voltage E
V
= 100 lx, CIE illuminant A V
o
- 210 - mV
Temperature coefficient of V
o
E
V
= 100 lx, CIE illuminant A TK
Vo
--2.3-mV/K
Short circuit current E
V
= 100 lx, CIE illuminant A I
k
-0.25-μA
Reverse light current
E
e
= 0.2 mW/cm
2
, λ = 525 nm, V
R
= 5 V I
ra
1.35 2.1 3.05 μA
E
V
= 100 lx, CIE illuminant A, V
R
= 5 V I
ra
0.16 0.25 0.39 μA
Angle of half sensitivity ϕ -± 65-deg
Wavelength of peak sensitivity λ
p
- 540 - nm
Range of spectral bandwidth λ
0.5
- 440 to 620 - nm
Rise time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
r
-70-ns
Fall time V
R
= 10 V, R
L
= 1 kΩ, λ = 820 nm t
f
-70-ns
0.1
1
10
100
1000
020406080100
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
V
R
= 10 V
0.01
0.1
1
10
10 100 1000
I
ra
- Reverse Light Current (μA)
E
V
- Illuminance (lx)
V
R
= 5 V, CIE illuminant A
VEMD5510CF
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 14-Sep-17
3
Document Number: 84387
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Reverse Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Sensitivity vs. Angular Displacement
0.01
0.1
1
10
024681012
I
ra
- Reverse Light Current (μA)
V
R
- Reverse Voltage (V)
50 lx
100 lx
250 lx
25 lx
10 lx
500 lx
1000 lx
E
V
(lx), CIE illuminant A
0
10
20
30
40
50
60
70
80
90
0.001 0.01 0.1 1 10
C
p
- Capacitance (pF)
V
R
- Reverse Voltage (V)
f = 1 MHz, E = 0
0
10
20
30
40
50
60
70
80
90
100
400 500 600 700 800 900 1000 1100
S(λ)
rel
- Relative Spectral Sensitivity (%)
λ - Wavelength (nm)
0.4 0.2 00.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
S
r
p
el
- Relative Sensitivity
P1-P3P4-P6P7-P7

VEMD5510CF-GS15

Mfr. #:
Buy VEMD5510CF-GS15
Manufacturer:
Vishay Semiconductors
Description:
Photodiodes 540nm 0.6uA 80pF w/ supression filter
Lifecycle:
New from this manufacturer.
Delivery:
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