Vishay Siliconix
Si7465DP
Document Number: 73113
S09-0271-Rev. C, 16-Feb-09
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
- 60
0.064 at V
GS
= - 10 V
- 5
26
0.080 at V
GS
= - 4.5 V
- 4.5
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerP AK SO-8
Bottom View
Ordering Information:
Si7465DP-T1-E3 (Lead (Pb)-free)
Si7465DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFE
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150°C)
a
T
A
= 25 °C
I
D
- 5 - 3.2
A
T
A
= 70 °C
- 4 - 2.6
Pulsed Drain Current
I
DM
- 25
Continuous Source Current (Diode Conduction)
a
I
S
- 2.9 - 1.2
Avalanche Current
L = 0.1 mH
I
AS
22
Single Pulse Avalanche Energy
E
AS
24.2 mJ
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.5 1.5
W
T
A
= 70 °C
2.2 0.94
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b,c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
27 36
°C/WSteady State 60 85
Maximum Junction-to-Case (Drain) Steady State
R
thJC
3.3 4.3