OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTP45N06LG

P1-P3P4-P6P7-P8
NTP45N06L, NTB45N06L
http://onsemi.com
4
2
1.8
1.4
1.6
1.2
1
0.6
100
10
1000
10000
0
50
4
20
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.038
0.034
0.03
403020
0.026
0.022
0.018
0.014
10 50 80
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
80
−50 50250−25 75 125100
1.8 54.23.42.6 5
.8
0304020 5010 8
0
040503020 6
0
10
3
10
30
40
V
GS
= 8 V
V
GS
= 7 V
V
GS
= 6 V
V
GS
= 5.5 V
V
GS
= 5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
DS
> = 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 5 V
150 175
V
GS
= 0 V
I
D
= 22.5 A
V
GS
= 5 V
60
70
50
20
0
80
10
30
40
60
70
0.042
0.046
0.038
0.034
0.03
0.026
0.022
0.018
0.042
0.046
60 70
0.8
V
GS
= 4.5 V
V
GS
= 9 V
V
GS
= 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
60 70
T
J
= 150°C
T
J
= 100°C
T
J
= 125°C
NTP45N06L, NTB45N06L
http://onsemi.com
5
0
I
D
= 45 A
T
J
= 25°C
V
GS
Q
2
Q
1
Q
T
V
GS
1000
100
10
1
0.1
1000
100
10
6
5
4
3
2
1
0
280
200
80
40
0
48
40
32
24
0
10
3600
2800
10
2400
2000
15520
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
C, CAPACITANCE (pF)
1600
1200
800
400
0
5
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS
)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
25 0 16 2012842
4
1 10 100 0.6 0.76 0.880.720.68 0.920.64 1
0.10 10 1001 25 125 15010075 17
5
50
V
GS
= 0 VV
DS
= 0 V
T
J
= 25°C
C
rss
C
iss
C
oss
C
rss
16
8
0.8 0.84
C
iss
V
GS
= 15 V
SINGLE PULSE
T
C
= 25°C
V
DS
= 30 V
I
D
= 45 A
V
GS
= 5 V
V
GS
= 0 V
T
J
= 25°C
I
D
= 45 A
10 ms
1 ms
100 ms
dc
t
r
t
d(off)
t
d(on)
t
f
V
DS
3200
0.96
120
160
240
R
DS(on)
Limit
Thermal Limit
Package Limit
4000
NTP45N06L, NTB45N06L
http://onsemi.com
6
0.00001 10.10.010.0010.0001 10
1
0.1
0.01
r(t),
EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED)
t, TIME (s)
Figure 13. Thermal Response
Normalized to R
q
JC
at Steady State
10
0.01
0.001
Figure 14. Thermal Response
t, TIME (s)
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.00001 0.001 0.01
1
0.1
10001001010.10.0001
Normalized to R
q
JA
at Steady State,
1″ square Cu Pad, Cu Area 1.127 in
2
,
3 x 3 inch FR4 board
P1-P3P4-P6P7-P8

NTP45N06LG

Mfr. #:
Buy NTP45N06LG
Manufacturer:
ON Semiconductor
Description:
MOSFET 60V 45A N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet