NTP45N06L

© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 2
1 Publication Order Number:
NTP45N06L/D
NTP45N06L, NTB45N06L
Power MOSFET
45 Amps, 60 Volts
Logic Level, N−Channel TO−220 and
D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Higher Current Rating
Lower R
DS(on)
Lower V
DS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter V
SD
Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Pb−Free Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
45 AMPERES, 60 VOLTS
R
DS(on)
= 28 mW
N−Channel
D
S
G
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx45N06L = Device Code
x = B or P
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
NTx45N06LG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx
45N06LG
AYWW
1
Gate
3
Sourc
e
4
Drain
2
Drain
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
NTP45N06L, NTB45N06L
http://onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v10 ms)
V
GS
V
GS
"15
"20
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
45
30
150
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
125
0.83
3.2
2.4
W
W/°C
W
W
Operating and Storage Temperature Range T
J
, T
stg
55 to +175 °C
Single Pulse Drain−to−Source Avalanche Energy − Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc, L = 0.3 mH
I
L(pk)
= 40 A, V
DS
= 60 Vdc, R
G
= 25 W)
E
AS
240 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
1.2
46.8
63.2
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds T
L
260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in
2
).
ORDERING INFORMATION
Device Package Shipping
NTP45N06L TO−220 50 Units / Rail
NTP45N06LG TO−220
(Pb−Free)
50 Units / Rail
NTB45N06L D
2
PAK 50 Units / Rail
NTB45N06LG D
2
PAK
(Pb−Free)
50 Units / Rail
NTB45N06LT4 D
2
PAK 800 Tape & Reel
NTB45N06LT4G D
2
PAK
(Pb−Free)
800 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTP45N06L, NTB45N06L
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
67
67.2
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 15 Vdc, V
DS
= 0 Vdc) I
GSS
±100 nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.8
4.7
2.0
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 4)
(V
GS
= 5.0 Vdc, I
D
= 22.5 Adc)
R
DS(on)
23 28
mW
Static Drain−to−Source On−Voltage (Note 4)
(V
GS
= 5.0 Vdc, I
D
= 45 Adc)
(V
GS
= 5.0 Vdc, I
D
= 22.5 Adc, T
J
= 150°C)
V
DS(on)
1.03
0.93
1.51
Vdc
Forward Transconductance (Note 4) (V
DS
= 8.0 Vdc, I
D
= 12 Adc) g
FS
22.8 mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
1212 1700 pF
Output Capacitance C
oss
352 480
Transfer Capacitance C
rss
90 180
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 45 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1 W) (Note 4)
t
d(on)
13 30 ns
Rise Time t
r
341 680
Turn−Off Delay Time t
d(off)
36 75
Fall Time t
f
158 320
Gate Charge
(V
DS
= 48 Vdc, I
D
= 45 Adc,
V
GS
= 5.0 Vdc) (Note 4)
Q
T
23 32 nC
Q
1
4.6
Q
2
14.1
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 45 Adc, V
GS
= 0 Vdc) (Note 4)
(I
S
= 45 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
1.01
0.92
1.15
Vdc
Reverse Recovery Time
(I
S
= 45 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 4)
t
rr
56
ns
t
a
30
t
b
26
Reverse Recovery Stored Charge Q
RR
0.09
mC
3. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in
2
).
4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.

NTP45N06L

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 60V 45A TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet