FCP067N65S3
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
I
D
= 22 A
V
DS
= 130 V
V
DS
= 400 V
T
C
= 25°C
V
GS
= 10 V
V
GS
= 20 V
V
DS
= 20 V
250 ms Pulse Test
25°C
−55°C
150°C
250 ms Pulse Test
T
C
= 25°C
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
0
0.00
0.05
0.10
0.15
0.0 0.3 1.2 1.5
0.1
1
10
100
0
0
2
4
6
8
10
I
D
, Drain Current (A)
R
DS(ON)
, Drain−Source
On−Resistance (W)
60 120
V
SD
, Body Diode Forward Voltage (V)
I
S
, Reverse Drain Current (A)
V
DS
, Drain−Source Voltage (V)
Capacitances (pF)
Q
g
, Total Gate Charge (nC)
V
GS
, Gate−Source Voltage (V)
20 100
0.20
0.25
0.3 1 10
1
10
100
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
20
V
DS
, Drain−Source Voltage (V)
I
D
, Drain Current (A)
46
1
10
100
7
V
GS
, Gate−Source Voltage (V)
I
D
, Drain Current (A)
35
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2
9030
V
GS
= 0 V
250 ms Pulse Test
25°C150°C
−55°C
200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
C
oss
V
GS
= 0 V
f = 1 MHz
C
iss
C
rss
0.1
1
10
100
1000
10000
100000
0.1 1 10 100 1000
40 60 80
0.6 0.9
