©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC2688
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classificntion
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 300 V
V
CEO
Collector-Emitter Voltage 300 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 200 mA
P
C
Collector Dissipation (T
a
=25°C) 1.25 W
P
C
Collector Dissipation (T
C
=25°C) 10 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=0.1mA, I
E
= 0 300 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 5mA, I
B
= 0, R
BE
= ∞ 300 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 0.1mA, I
C
= 0 5 V
I
CBO
Collector Cut-off Current V
CB
= 200V, I
E
= 0 100 µA
I
EBO
Emitter Cut-off Current V
EB
= 4V, I
C
= 0 100 µA
h
FE
* DC Current Gain V
CE
= 10V, I
C
= 10mA 40 250
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 50mA, I
B
= 5mA 1.5 V
f
T
Current Gain Bandwidth Product V
CE
= 30V, I
E
= -10mA 50 80 MHz
C
re
Feed Back Capacitance V
CB
= 30V, I
E
= 0
f = 1MHz
3 pF
Classification R O Y G
h
FE
40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 250
KSC2688
Color TV Chroma Output & Video Output
1
TO-126
1. Emitter 2.Collector 3.Base
