MOC8111M Datasheet MOC8111S, MOC8113S, MOC8111TM | P1-P3

MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)

MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3

September 2009

MOC8111M, MOC8112M, MOC8113M

6-Pin DIP Optocoupler for Power Supply Applications

(No Base Connection)

Features

■

High isolation voltage

7500 VAC Peak—1 second

■

High BV

CEO

minimum 70 Volts

■

Current transfer ratio in selected groups:

MOC8111M: 20% min.

MOC8112M: 50% min.

MOC8113M: 100% min.

■

Maximum switching time in saturation specified

■

Underwriters Laboratory (UL) recognized

(File #E90700, Vol. 2)

■

IEC60747-5-2 approved (ordering option V)

Applications

■

Power supply regulators

■

Digital logic inputs

■

Microprocessor inputs

■

Appliance sensor systems

■

Industrial controls

Description

The MOC811XM series consists of a Gallium Arsenide

IRED coupled with an NPN phototransistor. The base of

the transistor is not bonded to an external pin for

improved noise immunity.

Schematic

EMITTER

COLLECTOR

1

2

3

ANODE

CATHODE

4

5

6

N/C

6

1

6

1

MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 2

MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)

Absolute Maximum Ratings

(T

A

= 25°C Unless otherwise speciﬁed.)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Unit

TOTAL DEVICE

P

D

Total Device Power Dissipation @ T

A

= 25°C 260 mW

Derate above 25°C 3.5 mW/°C

T

OPR

Ambient Operating Temperature Range -40 to +100 °C

T

STG

Storage Temperature Range -40 to +150 °C

T

SOL

Lead Soldering Temperature (Wave Solder)

(1/16" from case, 10 sec. duration)

260 °C

INPUT LED

I

F

Forward Current – Continuous 90 mA

I

F

(pk) Forward Current – Peak (PW = 1µs, 300pps) 3 A

V

R

Reverse Voltage 6 V

P

D

LED Power Dissipation @ T

A

= 25°C 135 mW

Derate above 25°C 1.8 mW/°C

OUTPUT TRANSISTOR

P

D

Detector Power Dissipation @ T

A

= 25°C 200 mW

Derate above 25°C 2.67 mW/°C

MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 3

MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)

Electrical Characteristics

(T

A

= 25°C Unless otherwise speciﬁed.)

Individual Component Characteristics

Isolation Characteristics

Transfer Characteristic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

EMITTER

V

F

Input Forward Voltage I

F

= 60mA 1.35 1.65 V

I

F

= 10mA 1.15 1.50

V

R

Reverse Voltage I

R

= 10µA 6.0 15 V

C

J

Capacitance V

F

= 0V, f = 1.0MHz 50 pF

V

F

= 1V, f = 1.0MHz 65

I

R

Reverse Leakage Current V

R

= 3.0V .35 10 µA

DETECTOR

BV

CEO

Breakdow Voltage, Collector to Emitter I

C

= 1.0mA, I

F

= 0 70 V

BV

ECO

Breakdow Voltage, Emitter to Collector I

E

= 100µA, I

F

= 0 7 V

I

CEO

Leakage Current, Collector to Emitter V

CE

= 10V, I

F

= 0 5 50 V

C

CE

Capacitance, Collector to Emitter V

CE

= 0 V, f = 1MHz 8 pF

Symbol Characteristic Test Conditions Min. Typ. Max. Units

V

ISO

Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500

V

AC(PK)

C

ISO

Isolation Capacitance V

I-O

= 0, f = 1MHz 0.5 pF

Symbol Characteristics Test Conditions Device Min. Typ. Max. Units

DC CHARACTERISTICS

CTR Output/Input Current

Transfer Ratio

I

F

= 10mA, V

CE

= 5V MOC8111M 20 %

MOC8112M 50

MOC8113M 100

V

CE(SAT)

Collector-Emitter

Saturation Voltage

I

F

= 10mA, I

C

= 2.5mA All 0.27 0.4 V

AC CHARACTERISTICS

Non-Saturated Switching Times

t

on

Tur n-On Time R

L

= 100

Ω

, I

C

= 2mA,

V

CC

= 10V, See Figure 7

All 6.0 10 µs

t

off

Tur n-Off Time All 5.5 10 µs

Saturated Switching Times

t

on

Tur n-On Time I

F

= 20mA, V

CE

= 0.4V MOC8111M 3.0 5.5 µs

I

F

= 10mA, V

CE

= 0.4V MOC812M/3M 4.2 8.0

t

r

Rise-Time I

F

= 20mA, V

CE

= 0.4V MOC8111M 2.0 4.0 µs

I

F

= 10mA, V

CE

= 0.4V MOC812M/3M 3.0 6.0

t

off

Tur n-Off Time I

F

= 20mA, V

CE

= 0.4V MOC8111M 18 34 µs

I

F

= 10mA, V

CE

= 0.4V MOC812M/3M 23 39

t

f

Fall-Time I

F

= 20mA, V

CE

= 0.4V MOC8111M 11 20 µs

I

F

= 10mA, V

CE

= 0.4V MOC812M/3M 14 24

MOC8111M

MOC8111M

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