©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC8111M, MOC8112M, MOC8113M Rev. 1.0.3 3
MOC8111M, MOC8112M, MOC8113M — 6-Pin DIP Optocoupler for Power Supply Applications (No Base Connection)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Isolation Characteristics
Transfer Characteristic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 60mA 1.35 1.65 V
I
F
= 10mA 1.15 1.50
V
R
Reverse Voltage I
R
= 10µA 6.0 15 V
C
J
Capacitance V
F
= 0V, f = 1.0MHz 50 pF
V
F
= 1V, f = 1.0MHz 65
I
R
Reverse Leakage Current V
R
= 3.0V .35 10 µA
DETECTOR
BV
CEO
Breakdow Voltage, Collector to Emitter I
C
= 1.0mA, I
F
= 0 70 V
BV
ECO
Breakdow Voltage, Emitter to Collector I
E
= 100µA, I
F
= 0 7 V
I
CEO
Leakage Current, Collector to Emitter V
CE
= 10V, I
F
= 0 5 50 V
C
CE
Capacitance, Collector to Emitter V
CE
= 0 V, f = 1MHz 8 pF
Symbol Characteristic Test Conditions Min. Typ. Max. Units
V
ISO
Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500
V
AC(PK)
C
ISO
Isolation Capacitance V
I-O
= 0, f = 1MHz 0.5 pF
Symbol Characteristics Test Conditions Device Min. Typ. Max. Units
DC CHARACTERISTICS
CTR Output/Input Current
Transfer Ratio
I
F
= 10mA, V
CE
= 5V MOC8111M 20 %
MOC8112M 50
MOC8113M 100
V
CE(SAT)
Collector-Emitter
Saturation Voltage
I
F
= 10mA, I
C
= 2.5mA All 0.27 0.4 V
AC CHARACTERISTICS
Non-Saturated Switching Times
t
on
Tur n-On Time R
L
= 100
Ω
, I
C
= 2mA,
V
CC
= 10V, See Figure 7
All 6.0 10 µs
t
off
Tur n-Off Time All 5.5 10 µs
Saturated Switching Times
t
on
Tur n-On Time I
F
= 20mA, V
CE
= 0.4V MOC8111M 3.0 5.5 µs
I
F
= 10mA, V
CE
= 0.4V MOC812M/3M 4.2 8.0
t
r
Rise-Time I
F
= 20mA, V
CE
= 0.4V MOC8111M 2.0 4.0 µs
I
F
= 10mA, V
CE
= 0.4V MOC812M/3M 3.0 6.0
t
off
Tur n-Off Time I
F
= 20mA, V
CE
= 0.4V MOC8111M 18 34 µs
I
F
= 10mA, V
CE
= 0.4V MOC812M/3M 23 39
t
f
Fall-Time I
F
= 20mA, V
CE
= 0.4V MOC8111M 11 20 µs
I
F
= 10mA, V
CE
= 0.4V MOC812M/3M 14 24