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RJH60F0DPK-00#T0

P1-P3P4-P6P7-P8
RJH60F0DPK Preliminary
R07DS0234EJ0300 Rev.3.00 Page 4 of 7
Mar 30, 2011
Capacitance C (pF)
1
10
100
1000
10000
010050 150 200 250
300
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
20 4060
80
I
C
= 25 A
Ta = 25
°
C
V
GE
V
CE
V
CE
= 600 V
300 V
V
CE
= 600 V
300 V
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
C-E Diode Forward Voltage V
CEF
(V)
Forward Current vs. Forward Voltage (Typical)
Forward Current I
F
(A)
0
20
40
60
80
100
01234
5
V
GE
= 0 V
Ta = 25
°
C
Pulse Test
Cies
Coes
Cres
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
RJH60F0DPK Preliminary
R07DS0234EJ0300 Rev.3.00 Page 5 of 7
Mar 30, 2011
05025 15075 12510005025 15075 125100
800
400
1600
1200
0
120
80
40
200
160
0
Switching Characteristics (Typical) (3)
100
1000
10
t
d(off)
t
d(on)
t
f
t
r
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
Switching Characteristics (Typical) (4)
Eoff
Eon
Swithing Energy Losses E (µJ)
Switching Times t (ns)
110100
10
1000
100
100000
10000
Swithing Energy Losses E (µJ)
110100
Collector Current I
C
(A)
(Inductive load)
Eoff
Eon
Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)
Collector Current I
C
(A)
(Inductive load)
Switching Times t (ns)
V
CC
= 400 V, V
GE
= 15 V
Rg = 5 Ω, Tj = 150
°
C
t
r
includes the diode recovery
V
CC
= 400 V, V
GE
= 15 V
Rg = 5 Ω, Tj = 150
°
C
Eon includes the diode recovery
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5 Ω
Eon includes the diode recovery
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5 Ω
t
r
includes the diode recovery
t
d(off)
t
d(on)
t
f
t
r
RJH60F0DPK Preliminary
R07DS0234EJ0300 Rev.3.00 Page 6 of 7
Mar 30, 2011
Pulse Width PW (s)
Normalized Transient Thermal Impedance
γ
s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
Pulse Width PW (s)
Normalized Transient Thermal Impedance
γ
s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
0.01
0.1
10
1
10 µ 100 µ 1 m10 m 100 m1 10
0.01
1
0.1
10
10 µ 100 µ 1 m10 m 100 m1
10
P
DM
PW
T
D =
PW
T
θj – c(t) = γs (t) • θj – c
θj – c = 2°C/W, Tc = 25°C
0.05
0.2
0.1
0.5
D = 1
0.02
Tc = 25°C
0.01
1 shot pulse
Switching Time Test Circuit Waveform
t
d(off)
t
off
t
on
t
d(on)
t
f
t
r
t
tail
90%
90%90%
10%
10%
10%
10%
1%
D = 1
0.5
0.2
0.1
0.05
Tc = 25°C
P
DM
PW
T
D =
PW
T
θj − c(t) = γs (t) • θj − c
θj − c = 0.62 °C/W, Tc = 25 °C
0.02
1 shot pulse
0.01
Diode clamp
D.U.T
Rg
L
V
CC
V
GE
I
C
V
CE
P1-P3P4-P6P7-P8

RJH60F0DPK-00#T0

Mfr. #:
Buy RJH60F0DPK-00#T0
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors IGBT
Lifecycle:
New from this manufacturer.
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