2004 Nov 04 7
NXP Semiconductors Product data sheet
50 V, 3 A
PNP low V
CEsat
(BISS) transistor
PBSS5350X
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −50 V; I
E
= 0 A − − −100 nA
V
CB
= −50 V; I
E
= 0 A; T
j
= 150 °C − − −50 μA
I
CES
collector-emitter cut-off current V
CE
= −50 V; V
BE
= 0 V − − −100 nA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 A − − −100 nA
h
FE
DC current gain V
CE
= −2 V
I
C
= −0.1 A 200 − −
I
C
= −0.5 A 200 − −
I
C
= −1 A; note 1 200 − 450
I
C
= −2 A; note 1 130 − −
I
C
= −3 A; note 1 80 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= −0.5 A; I
B
= −50 mA − − −90 mV
I
C
= −1 A; I
B
= −50 mA − − −180 mV
I
C
= −2 A; I
B
= −100 mA − − −320 mV
I
C
= −2 A; I
B
= −200 mA; note 1 − − −270 mV
I
C
= −3 A; I
B
= −300 mA; note 1 − − −390 mV
R
CEsat
equivalent on-resistance I
C
= −2 A; I
B
= −200 mA; note 1 − 90 135 mΩ
V
BEsat
base-emitter saturation voltage I
C
= −2 A; I
B
= −100 mA − − −1.1 V
I
C
= −3 A; I
B
= −300 mA; note 1 − − −1.2 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −1 A −1.1 − − V
f
T
transition frequency I
C
= −100 mA; V
CE
= −5 V;
f
= 100 MHz
100 − − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= i
e
= 0 A; f = 1 MHz − − 35 pF
