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VS-HFA08PB120PBF

P1-P3P4-P6P7-P7
VS-HFA08PB120PbF, VS-HFA08PB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 20-Apr-16
1
Document Number: 94040
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08PB120... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the
VS-HFA08PB120... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08PB120... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
8 A
V
R
1200 V
V
F
at I
F
2.4 V
t
rr
typ. 28 ns
T
J
max. 150 °C
Diode variation Single die
1
2
3
TO-247AC modified
Cathode
to base
1
3
Cathode
Anode
2
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
1200 V
Maximum continuous forward current I
F
T
C
= 100 °C 8
ASingle pulse forward current I
FSM
130
Maximum repetitive forward current I
FRM
32
Maximum power dissipation P
D
T
C
= 25 °C 73.5
W
T
C
= 100 °C 29
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C
VS-HFA08PB120PbF, VS-HFA08PB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 20-Apr-16
2
Document Number: 94040
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 1200 - -
V
Maximum forward voltage V
FM
I
F
= 8.0 A
See fig. 1
-2.63.3
I
F
= 16 A - 3.4 4.3
I
F
= 8.0 A, T
J
= 125 °C - 2.4 3.1
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-0.3110
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 135 1000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 11 20 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 28 -
nst
rr1
T
J
= 25 °C
I
F
= 8.0 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-6395
t
rr2
T
J
= 125 °C - 106 160
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 4.5 8.0
A
I
RRM2
T
J
= 125 °C - 6.2 11
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 140 380
nC
Q
rr2
T
J
= 125 °C - 335 880
Peak rate of recovery
current during t
b
See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 133 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 85 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--1.7
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 40
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.25 -
Weight
-6.0- g
-0.21- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC modified (JEDEC) HFA08PB120
VS-HFA08PB120PbF, VS-HFA08PB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 20-Apr-16
3
Document Number: 94040
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0104
6
I
F
- Instantaneous
Forward Current (A)
100
28
V
FM
- Forward Voltage Drop (V)
0.01
0.1
1
10
100
0 300 600
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1000
900 1200
T
J
= 100 °C
10
100
1 10 100 1000
1
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10 000
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6P7-P7

VS-HFA08PB120PBF

Mfr. #:
Buy VS-HFA08PB120PBF
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1200V 8A HEXFRED TO-247 (2 LEAD)
Lifecycle:
New from this manufacturer.
Delivery:
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