OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRGP4640-EPBF

P1-P3P4-P6P7-P9P10-P11
IRGP4640PbF/IRGP4640-EPbF
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
4
Fig. 8 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
0 1 2 3 4 5 6 7 8
V
CE
(V)
0
10
20
30
40
50
60
70
80
90
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 12A
I
CE
= 24A
I
CE
= 48A
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 12A
I
CE
= 24A
I
CE
= 48A
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 12A
I
CE
= 24A
I
CE
= 48A
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
0 1 2 3 4 5 6 7 8
V
CE
(V)
0
10
20
30
40
50
60
70
80
90
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 1 2 3 4 5 6 7 8
V
CE
(V)
0
10
20
30
40
50
60
70
80
90
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IRGP4640PbF/IRGP4640-EPbF
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 20135
Fig. 16 - Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
0 25 50 75 100 125
R
G
(
Ω
)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
10 20 30 40 50
I
C
(A)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
Fig. 15 - Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 24A; V
GE
= 15V
0 25 50 75 100 125
Rg (Ω)
0
200
400
600
800
1000
1200
1400
1600
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
Fig. 17 - V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
8 1012141618
V
GE
(V)
4
6
8
10
12
14
16
T
i
m
e
(
µ
s
)
40
80
120
160
200
240
280
C
u
r
r
e
n
t
(
A
)
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
0 5 10 15
V
GE
(V)
0
20
40
60
80
100
120
I
C
E
(
A
)
T
J
= 25°C
T
J
= 175°C
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
0 102030405060
I
C
(A)
0
200
400
600
800
1000
1200
1400
1600
1800
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
IRGP4640PbF/IRGP4640-EPbF
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
6
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.2568 0.000311
0.3429 0.006347
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci i/Ri
Ci= τi/Ri
Fig. 18 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 19 - Typical Gate Charge
vs. V
GE
I
CE
= 24A; L = 600µH
0 20 40 60 80 100
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 300V
V
CES
= 400V
P1-P3P4-P6P7-P9P10-P11

IRGP4640-EPBF

Mfr. #:
Buy IRGP4640-EPBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors IGBT DISCRETES
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet