INSULATED GATE BIPOLAR TRANSISTOR
TO-247AC
IRGP4640PbF
TO-247AD
IRGP4640-EP
G
C
E
C
G
C
E
C
IRGP4640PbF
IRGP4640-EPbF
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
1
GC E
Gate Collector Emitter
V
CES
= 600V
I
C
= 40A, T
C
= 100°C
t
SC
5µs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.60V @ I
C
= 24A
Features Benefits
Low V
CE(ON)
and Switching Losses
High efficiency in a wide range of applications and switching
frequencies
Square RBSOA and Maximum Junction Temperature 175°C
Improved reliability due to rugged hard switching performance
and higher power capability
Positive V
CE (ON)
Temperature Coefficient Excellent current sharing in parallel operation
5µs short circuit SOA Enables short circuit protection scheme
Lead-Free, RoHS compliant Environmentally friendly
Applications
Inverters
UPS
Welding
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C
Continuous Collector Current 65
I
C
@ T
C
= 100°C
Continuous Collector Current 40
I
CM
Pulse Collector Current, V
GE
= 15V 72
I
LM
Clamped Inductive Load Current, V
GE
= 20V 96 A
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C
Maximum Power Dissipation 250 W
P
D
@ T
C
= 100°C
Maximum Power Dissipation 125
T
J
Operating Junction and -40 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
Junction-to-Case
––– ––– 0.60 °C/W
R
θ
CS
Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θ
JA
Junction-to-Ambient (typical socket mount) ––– ––– 40
E
C
G
n-channel
Form Quantit
y
IRGP4640PbF TO-247AC Tube 25 IRGP4640PbF
IRGP4640-EPbF TO-247AD Tube 25 IRGP4640-EPbF
Base part number Package Type
Standard Pack
Orderable part number
IRGP4640PbF/IRGP4640-EPbF
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
2
Notes:
Pulse width limited by max. junction temperature.
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100µH, R
G
= 10Ω.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Values are influenced by parasitic L and C in measurement.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 V V
GE
= 0V, I
C
= 100µA
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage 0.30 V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage 1.60 1.90 I
C
= 24A, V
GE
= 15V, T
J
= 25°C
—2.00— I
C
= 24A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 6.5 V V
CE
= V
GE
, I
C
= 700µA
V
GE ( t h )
/TJ
Threshold Voltage temp. coefficient -18 mVC V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
gfe Forward Transconductance 17 S V
CE
= 50V, I
C
= 24A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current 1.0 20 µA V
GE
= 0V, V
CE
= 600V
—600 V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
GE S
Gate-to-Emitter Leakage Current ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) 50 75 I
C
= 24A
Q
ge
Gate-to-Emitter Charge (turn-on) 15 20 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) 20 30 V
CC
= 400V
E
on
Turn-On Switching Loss 0.1 0.2
E
off
Turn-Off Switching Loss 0.6 0.7 mJ
E
total
Total Switching Loss 0.7 0.9 I
C
= 24A, V
CC
= 400V, V
GE
= 15V
t
d(on)
Turn-On delay time 40 55 R
G
= 10
, T
J
= 25°C
t
r
Rise time —2030ns
E nergy los s es include tail & diode rev ers e recov ery
t
d(off)
Turn-Off delay time 105 115
t
f
Fall time 30 40
E
on
Turn-On Switching Loss 0.4
E
off
Turn-Off Switching Loss 0.85 mJ
E
total
Total Switching Loss 1.25 I
C
= 24A, V
CC
= 400V, V
GE
=15V
t
d(on)
Turn-On delay time 40 R
G
=10, T
J
= 175°C
t
r
Rise time 25 ns
E nergy los s es include tail & diode rev ers e recov ery
t
d(off)
Turn-Off delay time 125
t
f
Fall time 40
C
ies
Input Capacitance 1490 pF V
GE
= 0V
C
oes
Output Capacitance 130 V
CC
= 30V
C
res
Reverse Transfer Capacitance 45 f = 1.0Mhz
T
J
= 175°C, I
C
= 96A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp =600V
Rg = 10, V
GE
= +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 µs V
CC
= 400V, Vp =600V
Rg = 10, V
GE
= +15V to 0V
Conditions
V
IRGP4640PbF/IRGP4640-EPbF
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 20133
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Fig. 3 - Power Dissipation vs. Case
Temperature
Fig. 4 - Forward SOA
T
C
= 25°C, T
J
175°C; V
GE
=15V
Fig. 5 - Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
10 100 1000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
1 10 100 1000 10000
V
CE
(V)
0.1
1
10
100
1000
I
C
(
A
)
1msec
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
25 50 75 100 125 150 175
T
C
(°C)
0
10
20
30
40
50
60
70
I
C
(
A
)
25 50 75 100 125 150 175
T
C
(°C)
0
50
100
150
200
250
300
P
t
o
t
(
W
)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
0.1 1 10 100
f , Frequency ( kHz )
0
10
20
30
40
50
60
70
80
L
o
a
d
C
u
r
r
e
n
t
(
A
)
For both:
Duty cycle : 50%
Tj = 175°C
Tsink = 100°C
Gate drive as specified
Power Dissipation = 125W
I
Square Wave:
V
CC
Dio de as specified

IRGP4640PBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IGBT 600V 65A 250W TO247AC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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