TISP2290
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT INFORMATION
1
NOVEMBER 1986 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Planar Passivated Junctions
Low Off-State Current<10 µA
Rated for International Surge Wave Shapes
UL Recognized, E132482
description
The TISP2290 is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices will supress voltage transients
between terminals A and C, B and C, and A and
B.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
DEVICE
V
(Z)
V
V
(BO)
V
‘2290 200 290
WAVE SHAPE STANDARD
I
TSP
A
8/20 µs ANSI C62.41 150
10/160 µs FCC Part 68 60
10/560 µs FCC Part 68 45
0.2/310 µs RLM 88 38
10/700 µs
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 µs REA PE-60 50
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
device symbol
TO-220 PACKAGE
(TOP VIEW)
A(T)
C(G)
B(R)
Pin 2 is in electrical contact with the mounting base.
MDXXANA
1
2
3
TISP2290
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
NOVEMBER 1986 - REVISED SEPTEMBER 1997
PRODUCT INFORMATION
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
NOTE 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
NOTES: 5. These parameters must be measured using pulse techniques, t
w
= 100 µs, duty cycle 2%.
6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
7. Linear rate of rise, maximum voltage limited to 80 % V
Z
(minimum)..
RATING SYMBOL VALUE UNIT
Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)
I
TSP
A
8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 150
10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60
5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38
5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45
10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 50
Non-repetitive peak on-state current, 50 Hz, 2.5 s(see Notes 1 and 2) I
TSM
10 A rms
Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di
T
/dt 250 A/µs
Junction temperature T
J
150 °C
Operating free - air temperature range 0 to 70 °C
Storage temperature range T
stg
-40 to +150 °C
Lead temperature 1.5 mm from case for 10 s T
lead
260 °C
electrical characteristics for the A and B terminals, T
J
= 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
Z
Reference zener
voltage
I
Z
= ± 1mA ± 200 V
I
D
Off-state leakage
current
V
D
= ± 50 V ± 10 µA
C
off
Off-state capacitance V
D
= 0 f = 1 kHz (see Note 4) 40 100 pF
electrical characteristics for the A and C or the B and C terminals, T
J
= 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
Z
Reference zener
voltage
I
Z
= ± 1mA ± 200 V
V
Z
Temperature coefficient
of reference voltage
0.1 %/
o
C
V
(BO)
Breakover voltage (see Notes 5 and 6) ± 290 V
I
(BO)
Breakover current (see Note 5) ± 0.15 ± 0.6 A
V
TM
Peak on-state voltage I
T
= ± 5 A (see Notes 5 and 6) ± 1.9 ± 3 V
I
H
Holding current (see Note 5) ± 150 mA
dv/dt
Critical rate of rise of
off-state voltage
(see Note 7)
± 5 kV/µs
I
D
Off-state leakage
current
V
D
= ± 50 V ± 10 µA
C
off
Off-state capacitance V
D
= 0 f = 1 kHz (see Note 4) 110 200 pF
3
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TISP2290
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
PRODUCT INFORMATION
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJA
Junction to free air thermal resistance 62.5 °C/W
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
The high level characteristics for terminals A and B are not guaranteed.

TISP2290-S

Mfr. #:
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) PROTECTOR DUAL BIDIRECTIONAL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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