ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA 30 V
∆BV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 µA, Referenced to 25
o
C
23
mV /
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1 µA
T
J
= 55
o
C
10 µA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100 nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100 nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1 1.6 3 V
∆V
GS(th)
/∆T
J
Gate Threshold VoltageTemp.Coefficient
I
D
= 250 µA, Referenced to 25
o
C
-4.2
mV /
o
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 6.3 A
0.023 0.027
Ω
T
J
= 125
o
C 0.035 0.045
V
GS
= 4.5 V, I
D
= 5.5 A
0.029 0.035
I
D(on)
On-State Drain Current V
GS
= 10 V, V
DS
= 5 V 20 A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 6.3 A
4.5 S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
830 pF
C
oss
Output Capacitance f = 1.0 MHz 185 pF
C
rss
Reverse Transfer Capacitance 80 pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time V
DD
= 15 V, I
D
= 1 A, 6 12 ns
t
r
Turn - On Rise Time
V
GS
= 10 V, R
GEN
= 6 Ω
10 18 ns
t
D(off)
Turn - Off Delay Time 18 29 ns
t
f
Turn - Off Fall Time 5 12 ns
Q
g
Total Gate Charge
V
DS
= 15 V, I
D
= 6.3 A,
9 13 nC
Q
gs
Gate-Source Charge V
GS
= 5 V 2.8 nC
Q
gd
Gate-Drain Charge 3.1 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Continuous Source Diode Current 1.3 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A (Note 2)
0.73 1.2 V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
a. 78
o
C/W when mounted on a minimum on a 1 in
2
pad of 2oz Cu in FR-4 board.
b. 156
o
C/W when mounted on a minimum pad of 2oz Cu in FR-4 board.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC655AN Rev.C
