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NSL12AWT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 3
1 Publication Order Number:
NSL12AW/D
NSL12AWT1G
High Current Surface Mount
PNP Silicon Low V
CE(sat)
Transistor for Battery
Operated Applications
Features
• High Current Capability (3 A)
• High Power Handling (Up to 650 mW)
• Low V
CE(s)
(170 mV Typical @ 1 A)
• Small Size
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Benefits
• High Specific Current and Power Capability Reduces Required PCB Area
• Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Collector-Emitter Voltage V
CEO
−12 Vdc
Collector-Base Voltage V
CBO
−12 Vdc
Emitter-Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous
Collector Current − Peak
I
C
I
CM
−2.0
−3.0
Adc
Electrostatic Discharge ESD HBM Class 3
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 1) 450
3.6
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
275 °C/W
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 2) 650
5.2
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
192 °C/W
Thermal Resistance,
Junction−to−Lead 6
R
q
JL
105 °C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
D
Single 1.4 W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
1. FR−4, Minimum Pad, 1 oz Coverage
2. FR−4, 1″ Pad, 1 oz Coverage
http://onsemi.com
M = Date Code
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
12 VOLTS
3.0 AMPS
PNP TRANSISTOR
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
SC−88/SOT−363
CASE 419B
STYLE 20
11 MG
G
1
6
MARKING DIAGRAM
1
(Note: Microdot may be in either location)
NSL12AWT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage, (I
C
= −10 mAdc, I
B
= 0) V
(BR)CEO
−12 −15 − Vdc
Collector− Base Breakdown Voltage, (I
C
= −0.1 mAdc, I
E
= 0) V
(BR)CBO
−12 −25 − Vdc
Emitter− Base Breakdown Voltage, (I
E
= −0.1 mAdc, I
C
= 0) V
(BR)EBO
−5.0 −7.0 − Vdc
Collector Cutoff Current, (V
CB
= −12 Vdc, I
E
= 0) I
CBO
− −0.02 −0.1
mAdc
Collector−Emitter Cutoff Current, (V
CES
= −12 Vdc, I
E
= 0) I
CES
− −0.03 −0.1
mAdc
Emitter Cutoff Current, (V
CES
= −5.0 Vdc, I
E
= 0) I
EBO
− −0.03 −0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= −0.5 A, V
CE
= −1.5 V)
(I
C
= −0.8 A, V
CE
= −1.5 V)
(I
C
= −1.0 A, V
CE
= −1.5 V)
h
FE
100
100
100
180
165
160
−
300
−
Collector− Emitter Saturation Voltage (Note 3)
(I
C
= −0.5 A, I
B
= −10 mA)
(I
C
= −0.8 A, I
B
= −16 mA)
(I
C
= −1.0 A, I
B
= −20 mA)
V
CE(sat)
−
−
−
−0.10
−0.14
−0.17
−0.160
−0.235
−0.290
V
Base − Emitter Saturation Voltage (Note 3)
(I
C
= −1.0 A, I
B
= −20 mA)
V
BE(sat)
− −0.84 −0.95
V
Base − Emitter Turn−on Voltage (Note 3)
(I
C
= −1.0 A, V
CE
= −1.5 V)
V
BE(on)
− −0.81 −0.95
V
Cutoff Frequency
(I
C
= −100 mA, V
CE
= −5.0 V, f = 100 MHz)
f
T
− 100 −
MHz
Output Capacitance
(V
CB
= −1.5 V, f = 1.0 MHz)
C
obo
− 50 65
pF
3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2%
ORDERING INFORMATION
Device Package Shipping
†
NSL12AWT1G SOT−363
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
0.1
0
0.5
1
0.3
10010
0
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. Collector Emitter Voltage vs Base Current Figure 2. Collector Emitter Voltage vs Collector Current
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
0.5
0.001 0.1 1
I
B
, BASE CURRENT (mA)
0.2
0.01
I
C
= 100 mA
500 mA
I
C
/I
B
= 100
0.1
0.4
800 mA
1 A
2 A
0.2
0.3
0.4
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I
C
/I
B
= 10
NSL12AWT1G
http://onsemi.com
3
I
C
, COLLECTOR CURRENT (A)
10.10.01
300
200
100
0
T
A
= −55°C
25°C
125°C
0.001
V
CE
= 1.5 V
400
0.01
0.1
1
10
Figure 3. DC Current Gain versus Collector
Current
I
C
, COLLECTOR CURRENT (AMPS)
Figure 4. Base Emitter Voltage versus
Collector Current
I
C
, COLLECTOR CURRENT (AMPS)
V
BE
, BASE EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
Figure 5. Base Emitter Saturation Voltage
versus Base Current
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
0.001 0.10.01 1
0.5
0.3
1.0
0.1 101
Figure 6. Safe Operating Area
0.6
10.010.001
0.7
0.8
0.9
1.0
0.1
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(sat)
, BASE EMITTER SATURATION VOLTAGE (V)
0.4
0.7
0.6
0.9
0.8
T
A
= −55°C
25°C
125°C
V
CE
= 1.5 V
I
C
/I
B
= 100
I
C
/I
B
= 10
SINGLE PULSE T
A
= 25°C
1 ms10 ms100 ms
dc
1 s
t, TIME (s)
Figure 7. Normalized Thermal Response
0.1
1
0.001
SINGLE PULSE
0.0001 0.001 0.01 0.1 1 10 1000
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.01
1000.00001
r(t), MINIMUM PAD NORMALIZED
TRANSIENT THERMAL RESISTANCE
0.01
D = 0.02
P1-P3P4-P4

NSL12AWT1G

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 3A 12V Switching PNP
Lifecycle:
New from this manufacturer.
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