Vishay Siliconix
Si5441DC
Document Number: 71055
S10-0210-Rev. E, 25-Jan-10
www.vishay.com
1
P-Channel 2.5 V (G-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(Typ.)
- 20
0.055 at V
GS
= - 4.5 V
- 5.3
11
0.06 at V
GS
= - 3.6 V
- 5.1
0.083 at V
GS
= - 2.5 V
- 4.3
1206-8 ChipFE T
®
D
D
D
G
D
D
D
S
1
Bottom View
Marking Code
BA XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5441DC-T1-E3 (Lead (Pb)-free)
Si5441DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 5.3 - 3.9
A
T
A
= 85 °C
- 3.8 - 2.8
Pulsed Drain Current
I
DM
- 20
Continuous Source Current
a
I
S
- 2.1 - 1.1
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.5 1.3
W
T
A
= 85 °C
1.3 0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
40 50
°C/W
Steady State 80 95
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
15 20