TSM3911D
20V Dual P-Channel MOSFET
Document Number:
DS_P0000083 1
Version: D15
Key Parameter Performance
Parameter Value
Unit
V
DS
-20 V
R
DS(on)
(max)
V
GS
= -4.5V
140
mΩ
V
GS
= -2.5V
200
V
GS
= -1.8V
300
Q
g
15.23 nC
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Block Diagram
Dual P-Channel MOSFET
Ordering Information
Part No. Package
Packing
TSM3911DCX6 RFG SOT-26 3kpcs / 7” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
-20 V
Gate-Source Voltage V
GS
±8 V
Continuous Drain Current I
D
-2.2 A
Pulsed Drain Current I
DM
-8 A
Continuous Source Current (Diode Conduction)
(Note 1,2)
I
S
-0.72 A
Maximum Power Dissipation
T
A
= 25°C
P
D
1.15
W
T
A
=70°C 0.73
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
30 °C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
80 °C/W
1. Gate 1 6. Drain 1
2. Source 2 5. Source 1
3. Gate 2 4. Drain 2
