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BYV27-600-TAP

P1-P3P4-P4
BYV27-600
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 04-Sep-12
1
Document Number: 86041
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultra-Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed axial-leaded glass envelope
• Low reverse current
• Ultra fast soft recovery switching
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Electronic ballast
•SMPS
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYV27-600 BYV27-600-TR 5000 per 10" tape and reel 25 000
BYV27-600 BYV27-600-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYV27-600 V
R
= 600 V; I
F(AV)
= 2 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics BYV27-600 V
R
= V
RRM
600 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
50 A
Average forward current T
amb
= 50 °C, I = 10 mm I
F(AV)
2A
Non repetitive reverse avalanche energy Inductive load, I
(BR)R
= 400 mA E
R
10 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
45 K/W
On PC board with spacing 25 mm R
thJA
100 K/W
BYV27-600
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 04-Sep-12
2
Document Number: 86041
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Forward Current vs. Forward Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 1 A V
F
- - 1.15 V
I
F
= 3 A V
F
- - 1.35 V
I
F
= 1 A, T
j
= 175 °C V
F
- - 0.85 V
I
F
= 3 A, T
j
= 175 °C V
F
- - 1.15 V
Reverse current
V
R
= V
RRM
I
R
--5μA
V
R
= V
RRM
, T
j
= 150 °C I
R
- - 150 μA
Reverse breakdown voltage I
R
= 100 μA BYV27-600 V
(BR)R
600 - - V
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- - 40 ns
Forward recovery I
F
= 1 A V
FP
-3.4- V
Forward recovery time I
F
= 1 A t
fr
-250- ns
0
50
100
150
200
250
300
350
25 50 75 100 125 150 175
14360
160 K/W
100 K/W
45 K/W
R
thJA
=
P
R
- Reverse Power Dissipation (mW)
T
j
- Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
P
R
- Limit
at 80 % V
R
1
10
100
1000
25 50 75 100 125 150 175
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
14361
V
R
= V
RRM
I
R
- Reverse Current (A)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 20 40 60 80 100 120 140 160 180
14359
T
amb
- Ambient Temperature (°C)
I
FAV
- Average Forward Current (A)
R
thJA
≤ 45 K/W
l = 10 mm
R
thJA
≤ 100 K/W
PCB: d = 25 mm
V
R
= V
RRM
half sine wave
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
14358
0.01
0.1
1
10
100
0.001
I
F
- Forward Current (A)
V
F
- Forward Voltage (V)
T
j
= 175 °C
T
j
= 25 °C
BYV27-600
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 04-Sep-12
3
Document Number: 86041
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typ. Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
10
20
30
40
50
60
70
0.1 1 10 100
V
R
- Reverse Voltage14362
C
D
- Diode Capacitance (pF)
f = 1 MHz
20543
3.6 (0.142) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
0.82 (0.032) max.
P1-P3P4-P4

BYV27-600-TAP

Mfr. #:
Buy BYV27-600-TAP
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2.0 Amp 600 Volt 50 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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