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DMG4407SSS-13

P1-P3P4-P6
DMG4407SSS
Document number: DS35540 Rev. 6 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4407SSS
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
-30V
11m @ V
GS
= -20V
-9.9A
17m @ V
GS
= -6V
-8.2A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.075 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMG4407SSS-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
Top View
ESD PROTECTED
Top View Equivalent Circuit
D
S
G
Gate Protection
Diode
Chengdu A/T Site Shanghai A/T Site
= Manufacturer’s Marking
G4407SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 4
8 5
G4407SS
WW
YY
1 4
8 5
G4407SS
WW
YY
DS
D
D
D
S
S
G
DMG4407SSS
Document number: DS35540 Rev. 6 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4407SSS
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±25 V
Continuous Drain Current (Note 6) V
GS
= -20V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-9.9
-7.9
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-12.5
-10.0
A
Continuous Drain Current (Note 6) V
GS
= -6V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-8.2
-6.5
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-11.0
-8.7
A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
3.0 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
-80 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.45 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
88 °C/W
t<10s 50 °C/W
Total Power Dissipation (Note 6)
P
D
1.82 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
JA
70 °C/W
t<10s 41 °C/W
Thermal Resistance, Junction to Case (Note 6)
R
JC
7.6 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-50 to 155 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current
I
DSS
— —
-1 A
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±10 A
V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
-1.7 — -3.0 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
—
9 11
m
V
GS
= -20V, I
D
= 12A
—
10 13
V
GS
= -10V, I
D
= 10A
—
12.7 17
V
GS
= -6V, I
D
= 10A
Forward Transfer Admittance
|Y
fs
|
—
21 — S
V
DS
= -5V, I
D
= -10A
Diode Forward Voltage
V
SD
—
-0.7 -1.0 V
V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
2246
—
pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
352
—
pF
Reverse Transfer Capacitance
C
rss
—
294
—
pF
Gate resistance
R
g
—
5.1
—
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
—
20.5
—
nC
V
GS
= -10V, V
DS
= -15V,
I
D
= -12A
Total Gate Charge (V
GS
= 10V) Q
g
—
41
—
nC
Gate-Source Charge
Q
g
s
—
7.6
—
nC
Gate-Drain Charge
Q
g
d
—
8.0
—
nC
Turn-On Delay Time
t
D
(
on
)
—
11.3
—
ns
V
DD
= -15V, V
GS
= -10V,
R
L
= 1.25, R
G
= 3,
Turn-On Rise Time
t
r
—
15.4
—
ns
Turn-Off Delay Time
t
D
(
off
)
—
38.0
—
ns
Turn-Off Fall Time
t
f
—
22.0
—
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG4407SSS
Document number: DS35540 Rev. 6 - 2
3 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4407SSS
NEW PRODUCT
0 0.5 1.0 1.5 2.0
-V , DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
DS
0
5
10
15
20
25
30
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 3.0V
GS
V = 3.5V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 5.0V
GS
1.0 1.5 2.0 2.5 3.0 3.5 4.0
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
0
5
10
15
20
25
30
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = 150C
A
T = 125C
A
T = 85C
A
T = 25C
A
T = -55C
A
V = -5.0V
DS
0 5 10 15 20 25 30
-I , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
0
0.01
0.02
0.03
,D
AI
-S
E
-
ESIS
A
E( )
DS(ON)
0 5 10 15 20 25 30
-I , DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
D
0
0.01
0.02
0.03
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E( )
DS(ON)
T = -55C
A
T = 25C
A
T = 85C
A
T = 125C
A
T = 150C
A
V = -4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 5 On-Resistance Variation with Temperature
0.5
0.7
0.9
1.1
1.3
1.5
1.7
, D
AIN-S
E
ON-RESISTANCE (Normalized)
DS(ON)
0
0.004
0.008
0.012
0.016
0.020
0.024
0.028
0.032
0.036
0.040
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 6 On-Resistance Variation with Temperature
V= -10V
I= A
GS
D
-10
V=5V
I= A
GS
D
-4.
-5
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESISTAN
C
E ( )
DS(on)
P1-P3P4-P6

DMG4407SSS-13

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Description:
MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K
Lifecycle:
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