© 2000 IXYS All rights reserved
1 - 1
DSDI 60 I
FAVM
= 63 A
V
RRM
= 1400-1800 V
t
rr
= 40 ns
Features
●
International standard package
JEDEC TO-247 AD
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low I
RM
-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
●
Creepage distance between leads
8.5 mm
Applications
●
Antiparallel diode for high frequency
switching devices
●
Anti saturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
●
Operating at lower temperature or
space saving by reduced cooling
Dimensions
See DSEI 60-12 on page D5 - 27
① I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
V
RSM
V
RRM
Type
V V
1400 1400 DSDI 60-14A
1600 1600 DSDI 60-16A
1800 1800 DSDI 60-18A
Symbol Test Conditions Maximum Ratings
I
FRMS
T
VJ
= T
VJM
100 A
I
FAVM
① T
C
= 60°C; rectangular, d = 0.5 63 A
I
FRM
t
P
< 10 ms; rep. rating, pulse width limited by T
VJM
800 A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine 500 A
t = 8.3 ms (60 Hz), sine 540 A
T
VJ
= 150°C; t = 10 ms (50 Hz), sine 450 A
t = 8.3 ms (60 Hz), sine 480 A
I
2
t T
VJ
= 45°C t = 10 ms (50 Hz), sine 1250 A
2
s
t = 8.3 ms (60 Hz), sine 1200 A
2
s
T
VJ
= 150°C; t = 10 ms (50 Hz), sine 1000 A
2
s
t = 8.3 ms (60 Hz), sine 950 A
2
s
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+150 °C
P
tot
T
C
= 25°C 416 W
M
d
Mounting torque 0.8...1.2 Nm
Weight 6g
Symbol Test Conditions Characteristic Values
typ. max.
I
R
T
VJ
= 25°CV
R
= V
RRM
12mA
T
VJ
= 25°CV
R
= 0.8 • V
RRM
0.5 mA
T
VJ
= 125°CV
R
= 0.8 • V
RRM
3mA
V
F
I
F
= 70 A; T
VJ
= 125°C 2.6 V
T
VJ
=25°C 4.1 V
V
T0
For power-loss calculations only 1.9 V
r
T
T
VJ
= T
VJM
10 mW
R
thJC
0.4 K/W
R
thCK
0.25 K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V; T
VJ
= 25°C 40 ns
t
rr
I
F
= 70 A; -di/dt = 500 A/ms; V
R
= 1000 V; 300 ns
I
RM
T
VJ
= 25°C 60 A
t
rr
I
F
= 70 A; -di/dt = 500 A/ms; V
R
= 1000 V; 400 ns
I
RM
T
VJ
= 125°C 85 A
Super Fast
Recovery Diode
A
C
TO-247 AD
C
C
A
A = Anode, C = Cathode
036
Preliminary Data
