Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data Rev. 01 — 19 November 2001 5 of 13
9397 750 08621
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 0.25 mA; V
GS
=0V
T
j
=25°C36−−V
T
j
= −55 °C32−−V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9
T
j
=25°C 1 1.5 2 V
T
j
= 175 °C 0.5 −−V
T
j
= −55 °C −−2.3 V
I
DSS
drain-source leakage current V
DS
= 30 V; V
GS
=0V
T
j
=25°C − 0.05 10 µA
T
j
= 175 °C −−500 µA
I
GSS
gate-source leakage current V
GS
= ±10 V; V
DS
=0V − 1 100 nA
R
DSon
drain-source on-state resistance V
GS
=5V; I
D
=25A;Figure 7 and 8
T
j
=25°C − 45mΩ
T
j
= 175 °C −−9.25 mΩ
V
GS
= 4.5 V; I
D
= 25 A; Figure 7 and 8
T
j
=25°C −−5.4 mΩ
V
GS
= 10 V; I
D
= 25 A; Figure 7 and 8
T
j
=25°C − 3.5 4 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge I
D
= 75 A; V
DD
=15V; V
GS
=5V;Figure 13 − 97 − nC
Q
gs
gate-source charge − 20 − nC
Q
gd
gate-drain (Miller) charge − 39 − nC
C
iss
input capacitance V
GS
=0V; V
DS
= 20 V; f = 1 MHz; Figure 11 − 6000 − pF
C
oss
output capacitance − 1700 − pF
C
rss
reverse transfer capacitance − 1400 − pF
t
d(on)
turn-on delay time V
DD
=15V; R
D
= 1.2 Ω; V
GS
=5V; R
G
=6Ω;
resistive load
− 45 − ns
t
r
turn-on rise time − 220 − ns
t
d(off)
turn-off delay time − 435 − ns
t
f
turn-off fall time − 320 − ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
=0V;Figure 12 − 0.85 1.2 V
V
SD
source-drain (diode forward) voltage I
S
= 75 A; V
GS
=0V;Figure 12 − 1.1 − V
t
rr
reverse recovery time I
S
= 20 A; dI
S
/dt = −100 A/µs; V
GS
=0V − 400 − ns
Q
r
recovered charge − 1 −µC
