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ZXMS6004DGTA

P1-P3P4-P6P7-P9P10-P10
Issue 1 - December 2008 1 www.zetex.com
© Diodes Incorporated, 2008 www.diodes.com
A Product Line of
Diodes Incorporated
ZXMS6004DG
60V N-channel self protected enhancement mode
Intellifet MOSFET
Summary
Continuous drain source voltage 60 V
On-state resistance 500 mΩ
Nominal load current (V
IN
= 5V) 1.3 A
Clamping energy 490mJ
Description
The ZXMS6004DG is a self protected low side MOSFET with logic level
input. It integrates over-temperature, over-current, over-voltage (active
clamp) and ESD protected logic level functionality. The ZXMS6004DG is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard MOSFETs are
not rugged enough.
Features
• Compact high power dissipation package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
Ordering information
Device Part mark Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXMS66004DGTA ZXMS
6004D
7 12 embossed 3,000 units
D
Top view
S
D
IN
ZXMS6004DG
Issue 1 - December 2008 2 www.zetex.com
© Diodes Incorporated, 2008 www.diodes.com
Functional block diagram
Application information
• Especially suited for loads with a high in-rush current such as lamps and motors.
• All types of resistive, inductive and capacitive loads in switching applications.
• μC compatible power switch for 12V and 24V DC applications.
• Automotive rated.
• Replaces electromechanical relays and discrete circuits.
• Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at
low V
DS
to minimise on state power dissipation. The maximum DC operating current is
therefore determined by the thermal capability of the package/board combination, rather than
by the protection circuitry. This does not compromise the product’s ability to self-protect at low
V
DS
.
Over-voltage
Protection
ESD
Protection
Over-temperature
Protection
Over-current
Protection
Logic
dV/dt
Limitation
IN
D
S
ZXMS6004DG
Issue 1 - December 2008 3 www.zetex.com
© Diodes Incorporated, 2008 www.diodes.com
Absolute maximum ratings
Thermal resistance
NOTES
(a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air
conditions.
(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board in still air
conditions.
(c) Thermal resistance from junction to the mounting surface of the drain pin.
Parameter Symbol Limit Unit
Continuous Drain-Source voltage V
DS
60 V
Drain-Source voltage for short circuit protection V
DS(SC)
36 V
Continuous input voltage V
IN
-0.5 ... +6 V
Continuous input current
-0.2V≤V
IN
≤6V
V
IN
<-0.2V or V
IN
>6V
I
IN
No limit
│I
IN
│≤2
mA
Operating temperature range T
j
, -40 to +150 °C
Storage temperature range T
stg
-55 to +150 °C
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
1.3
10.4
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
3.0
24
W
mW/°C
Pulsed drain current @ V
IN
=3.3V I
DM
2A
Pulsed drain current @ V
IN
=5V I
DM
2.5 A
Continuous source current (Body Diode)
(a)
I
S
1A
Pulsed dource current (Body Diode) I
SM
5A
Unclamped single pulse inductive energy,
Tj=25°C, I
D
=0.5A, V
DD
=24V
E
AS
490 mJ
Electrostatic discharge (Human body model) V
ESD
4000 V
Charged device model V
CDM
1000 V
Parameter Symbo Value Unit
Junction to ambient
(a)
R
θJA
96
°C/W
Junction to ambient
(b)
R
θJA
42
°C/W
Junction to case
(c)
R
θJC
12
°C/W
P1-P3P4-P6P7-P9P10-P10

ZXMS6004DGTA

Mfr. #:
Buy ZXMS6004DGTA
Manufacturer:
Diodes Incorporated
Description:
MOSFET INTELLIFET MOSFET 60V N CHAN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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