APTGT300H60G Datasheet APTGT300H60G | P1-P3

APTGT300H60G

APTGT300H60G – Rev 2 October, 2012

www.microsemi.com

1-6

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

G4

0/VBUS

E3

Q3

G3

OUT2

VBUS

E1

Q1

G1

E4

Q4

OUT1

E2

Q2

G2

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 600 V

T

C

= 25°C

430

I

C

Continuous Collector Current

T

C

= 80°C

300

I

CM

Pulsed Collector Current T

C

= 25°C 500

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

1150 W

RBSOA Reverse Bias Safe Operating Area T

j

= 150°C 600A @ 550V

V

CES

= 600V

I

C

= 300A @ Tc = 80°C

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Trench + Field Stop IGBT3

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Kelvin emitter for easy drive

 Very low stray inductance

- Symmetrical design

- M5 power connectors

 High level of integration

Benefits

 Stable temperature behavior

 Very rugged

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Easy paralleling due to positive T

C

of V

CEsat

 Low profile

 RoHS Compliant

Full - Bridge

Trench + Field Stop IGBT3

Powe

r M

odule

APTGT300H60G

APTGT300H60G – Rev 2 October, 2012

www.microsemi.com

2-6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 600V 350 µA

T

j

= 25°C

1.4 1.8

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

=15V

I

C

= 300A

T

j

= 150°C

1.5

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 1.5 mA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 500 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 24

C

oes

Output Capacitance 1.5

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

0.75

nF

T

d(on)

Turn-on Delay Time 115

T

r

Rise Time 45

T

d(off)

Turn-off Delay Time 200

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 300A

R

G

= 1.8

55

ns

T

d(on)

Turn-on Delay Time 120

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 250

T

f

Fall Time

Inductive Switching (150°C)

V

GE

= ±15V

V

Bus

= 300V

I

C

= 300A

R

G

= 1.8

70

ns

T

j

= 25°C 1.5

E

on

Turn on Energy

T

j

= 150°C 2.7

mJ

T

j

= 25°C 8.55

E

off

Turn off Energy

V

GE

= ±15V

V

Bus

= 300V

I

C

= 300A

R

G

= 1.8

T

j

= 150°C 10.5

mJ

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

600 V

T

j

= 25°C 150

I

RM

Maximum Reverse Leakage Current V

R

=600V

T

j

= 150°C 400

µA

I

F

DC Forward Current

Tc = 80°C 300 A

T

j

= 25°C 1.5 1.9

V

F

Diode Forward Voltage

I

F

= 300A

V

GE

= 0V

T

j

= 150°C 1.4

V

T

j

= 25°C 130

t

rr

Reverse Recovery Time

T

j

= 150°C 225

ns

T

j

= 25°C 13.5

Q

rr

Reverse Recovery Charge

T

j

= 150°C 28.5

µC

T

j

= 25°C 3.5

E

r

Reverse Recovery Energy

I

F

= 300A

V

R

= 300V

di/dt =3100A/µs

T

j

= 150°C 7.1

mJ

APTGT300H60G

APTGT300H60G – Rev 2 October, 2012

www.microsemi.com

3-6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.13

R

thJC

Junction to Case Thermal Resistance

Diode 0.21

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 175

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

To heatsink M6 3 5

Torque Mounting torque

For terminals M5 2 3.5

N.m

Wt Package Weight 300 g

SP6 Package outline (dimensions in mm)

See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com

APTGT300H60G

APTGT300H60G

Products related to this Datasheet