Symbol Min Typ Max Units
BV
DSS
150 V
V
DS
=150V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
3.5 4.3 5.1 V
9.2 11
T
J
=125°C 17.8 21.5
g
FS
50 S
V
SD
0.7 1 V
I
S
106 A
C
iss
3010 pF
C
oss
345 pF
C
rss
14 pF
R
g
1 2 3 Ω
Q
g
(10V)
43 60 nC
Q
gs
18 nC
Q
gd
10 nC
t
D(on)
19 ns
t
r
24 ns
t
D(off)
30 ns
Turn-Off DelayTime
V
GS
=10V, V
DS
=75V, R
L
=3.75Ω,
R
GEN
=3Ω
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Turn-On DelayTime
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
Diode Forward Voltage
DYNAMIC PARAMETERS
TO-263
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=75V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Forward Transconductance
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
I
D
=250µA, VGS=0V
R
DS(ON)
Static Drain-Source On-Resistance
TO-220
I
S
=1A,V
GS
=0V
8.9 10.7 mΩ
mΩ
V
GS
=10V, V
DS
=75V, I
D
=20A
V
DS
=5V, I
D
=20A
V
GS
=10V, I
D
=20A
V
GS
=10V, I
D
=20A
t
rr
75 ns
Q
rr
880
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=20A, dI/dt=500A/µs
I
F
=20A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev.1.0: December 2014 www.aosmd.com Page 2 of 6
