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BCM857BS-7-F

P1-P3P4-P5
BCM857BS
Datasheet Number DS37299 Rev. 1 - 2
1 of 5
www.diodes.com
June 2014
© Diodes Incorporated
BCM857BS
45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363
Features
• BV
CEO
> -45V
• I
C
= -100mA High Collector Current
• Pair of PNP Transistors That Are Intrinsically Matched (Note 1)
• 10% Matching on Current Gain (h
FE
)
• 2mV Matching on Base-Emitter Voltage (V
BE
)
• Fully Internally Isolated in a Small Surface Mount Package
• Totally Lead-Free & Fully RoHS compliant (Notes 2 & 3)
• Halogen and Antimony Free. "Green" Device (Note 4)
• Qualified to AEC-Q101 for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin Finish. Solderable per
MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
Ordering Information (Note 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
BCM857BS-7-F AEC-Q101 M3W 7 8 3,000
Notes: 1. Intrinsically matched pair as this is built with adjacent die from the same wafer.
2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2014 2015 2016 2017 2018 2019 2020 2021
Code B C D E F G H I
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Device Symbol
M3W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
e3
Top View
SOT363
Top View
Pin-Out
C2
E2
B2
C
1
E1
B1
SOT363
BCM857BS
Datasheet Number DS37299 Rev. 1 - 2
2 of 5
www.diodes.com
June 2014
© Diodes Incorporated
BCM857BS
Absolute Maximum Ratings (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-45 V
Emitter-Base Voltage
V
EBO
-5.0 V
Collector Current
I
C
-100 mA
Peak Collector Current
I
CM
-200 mA
Peak Base Current
I
BM
-200 mA
Thermal Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) Total Device
P
D
200 mW
Thermal Resistance, Junction to Ambient Air (Note 6)
R
θ
JA
625
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 8) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50 — — V
I
C
= 100µA, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-45 — — V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-5 — — V
I
E
= 100µA, I
C
= 0
DC Current Gain
h
FE
220 — 475 —
V
CE
= -5.0V, I
C
= -2.0mA
DC Current Gain matching (Note 9)
h
FE1/
h
FE2
0.9 1 — —
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Emitter Saturation Voltage
V
CE(sat)
— —
-100
-400
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
— -700 — mV
I
C
= -10mA, I
B
= -0.5mA
Base-Emitter Voltage
V
BE(on)
-580 -665 -750 mV
V
CE
= -5.0V, I
C
= -2.0mA
Base-Emitter Voltage matching (Note 10)
V
BE1(on) -
V
BE2(on)
— — 2 mV
V
CE
= -5.0V, I
C
= -2.0mA
Base-Emitter Voltage
V
BE(on)
-580 -665 -750 mV
V
CE
= -5.0V, I
C
= -2.0mA
Collector-Cutoff Current
I
CBO
—
—
—
—
-15
-4.0
nA
µA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
Emitter Cutoff Current
I
EBO
— — -100 nA
V
EB
= -5.0V, I
C
= 0
Gain Bandwidth Product
f
T
100 — — MHz
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
Collector-Base Capacitance
C
CBO
— 2 3 pF
V
CB
= -10V, f = 1.0MHz
Emitter-Base Capacitance
C
EBO
— 11 — pF
V
EB
= -0.5V, f = 1.0MHz
Notes: 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
8. Short duration pulse test used to minimize self-heating effect.
9. The smaller of the two values is taken as the numerator.
10. The smaller of the two values is subtracted from the larger value.
BCM857BS
Datasheet Number DS37299 Rev. 1 - 2
3 of 5
www.diodes.com
June 2014
© Diodes Incorporated
BCM857BS
Typical Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
0
50
100
150
200
250
0100200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
°
1
10
100
1,000
10
100
1
h
D
C
C
U
R
R
E
N
T
G
AI
N
FE,
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
0
0.1
0.2
0.3
0.4
0.5
0.1
110
100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
10
100
1,000
110100
f,
G
AI
N
-BA
N
D
WI
D
T
H
P
R
O
D
U
C
T
(
M
H
z)
T
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current
C
P1-P3P4-P5

BCM857BS-7-F

Mfr. #:
Buy BCM857BS-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 45V Matched Pair PNP Bvceo -45V -100mA
Lifecycle:
New from this manufacturer.
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