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IPI80P03P405AKSA1

P1-P3P4-P6P7-P9
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
OptiMOS
®
-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25°C,
V
GS
=-10V
-80 A
T
C
=100°C,
V
GS
=-10V
2)
-80
Pulsed drain current
2)
I
D,pulse
T
C
=25°C
-320
Avalanche energy, single pulse
E
AS
I
D
=-40A
410 mJ
Avalanche current, single pulse
I
AS
-
-80 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25 °C
137 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
-30 V
R
DS(on)
(SMD Version) 4.7
mΩ
I
D
-80 A
Product Summary
Type Package Marking
IPB80P03P4-05 PG-TO263-3-2 4P0305
IPI80P03P4-05 PG-TO262-3-1 4P0305
IPP80P03P4-05 PG-TO220-3-1 4P0305
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
Rev. 1.0 page 1 2008-09-30
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - - 1.1 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
---62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
3)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
= -1mA
-30 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=-253µA
-2.0 -3.0 -4.0
Zero gate voltage drain current
I
DSS
V
DS
=-24V, V
GS
=0V,
T
j
=25°C
- -0.05 -1 µA
V
DS
=-24V, V
GS
=0V,
T
j
=125°C
2)
- -20 -200
Gate-source leakage current
I
GSS
V
GS
=-16V, V
DS
=0V
- - -100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=-10V, I
D
=-80A
- 4.1 5
mΩ
V
GS
=-10V, I
D
=-80A,
SMD version
- 3.8 4.7
Values
Rev. 1.0 page 2 2008-09-30
IPB80P03P4-05
IPI80P03P4-05, IPP80P03P4-05
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
C
iss
- 7900 10300 pF
Output capacitance
C
oss
- 2340 3040
Reverse transfer capacitance
C
rss
- 50 100
Turn-on delay time
t
d(on)
-35-ns
Rise time
t
r
-10-
Turn-off delay time
t
d(off)
-70-
Fall time
t
f
-20-
Gate Char
g
e Characteristics
2)
Gate to source charge
Q
gs
-4255nC
Gate to drain charge
Q
gd
-1020
Gate charge total
Q
g
- 100 130
Gate plateau voltage
V
plateau
- -5.3 - V
Reverse Diode
Diode continous forward current
2)
I
S
- - -80 A
Diode pulse current
2)
I
S,pulse
- - -320
Diode forward voltage
V
SD
V
GS
=0V, I
F
=-80A,
T
j
=25°C
- - -1.3 V
Reverse recovery time
2)
t
rr
- 100 - ns
Reverse recovery charge
2)
Q
rr
-80-nC
T
C
=25°C
Values
V
GS
=0V, V
DS
=-25V,
f =1MHz
V
DD
=-15V,
V
GS
=-10V, I
D
=-80A,
R
G
=3.5Ω
V
DD
=-24V, I
D
=-80A,
V
GS
=0 to -10V
V
R
=-15V, I
F
=-80A,
di
F
/dt =-100A/µs
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an R
thJC
= 1.1K/W the chip is able to carry -146A at 25°C.
Rev. 1.0 page 3 2008-09-30
P1-P3P4-P6P7-P9

IPI80P03P405AKSA1

Mfr. #:
Buy IPI80P03P405AKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH TO262-3
Lifecycle:
New from this manufacturer.
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