VS-VSKT170-14PBF

VS-VSK.170PbF, VS-VSK.250PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 09-Feb-17
7
Document Number: 94417
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 16 - On-State Power Loss Characteristics
Fig. 17 - On-State Power Loss Characteristics
3500
4000
4500
5000
5500
6000
6500
7000
7500
11010
0
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
VSK.250.. series
per junction
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T = 130 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
3000
4000
5000
6000
7000
8000
9000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum non-repetitive surge Current
vs. pulse train duration. Control of
conduction may not be maintained.
VSK.250.. series
per junction
Initial T
J
= 130 °C
No voltage reapplied
Rated V
RRM
reapplied
020406080100120
Maximum Allowable Ambient Temperature (°C)
0
.
3
K
/
W
0
.
2
5
K
/
W
0
.
2
0
K
/
W
0
.
1
6
K
/
W
0
.
1
2
K
/
W
0
.
0
8
K
/
W
0
.
0
5
K
/
W
R
=
0
.
0
2
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600
180°
120°
90°
60°
30°
Maximum Total On-state Power Loss (W)
Conduction angle
Total RMS Output Current (A)
VSK.250.. series
per module
T
J
= 130 °C
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
1
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0.02
K
/
W
0
.
0
3
K
/
W
0
.
0
4
K
/
W
0
.
0
5
K
/
W
0
.
0
6
K
/
W
0
.
1
K
/
W
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.3
K/
W
0
200
400
600
800
1000
1200
1400
0
100 200 300 400 500
Maximum Total Power Loss (W)
Total Output Current (A)
180°
(sine)
180°
(rect.)
2 x VSK.250.. series
single phase bridge
connected
T
J
= 130 °C
VS-VSK.170PbF, VS-VSK.250PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 09-Feb-17
8
Document Number: 94417
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 18 - On-State Power Loss Characteristics
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 21 - Reverse Recovery Charge Characteristics
Fig. 22 - Reverse Recovery Charge Characteristics
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
1
K
/
W
-
D
e
l
t
a
R
0
.
0
3
K
/
W
0
.
0
4
K
/
W
0
.
0
5
K
/
W
0
.
0
6
K
/
W
0
.
0
8
K
/
W
0
.
1
K
/
W
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
2
0
K
/
W
0
.
2
5
K
/
W
t
h
S
A
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
100 200 300 400 500 600 700
Maximum Total Power Loss (W)
Total Output Current (A)
120°
(Rect)
3 x VSK.250.. series
three phase bridge
connected
T
J
= 130 °C
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
100
1000
10 000
Instantaneous Forward Current (V)
Instantaneous Forward Voltage (V)
T
J
= 130 °C
VSK.170 series
per junction
T
J
= 25 °C
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
100
1000
10 000
Instantaneous Forward Current (V)
Instantaneous Forward Voltage (V)
T
J
= 130 °C
VSK.250 series
per junction
T
J
= 25 °C
200
400
600
800
1000
1200
1400
1600
1800
0 102030405060708090100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Typical Reverse Recovery Charge - Q
rr
(µC)
I
TM
= 800 A
500 A
300 A
200 A
100 A
VSK.170.. series
T
J
= 130 °C
per junction
50 A
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0 1020304050607080901
00
Typical Reverse Recovery Charge - Q
rr
(µC)
Rate Of Fall Of On-state Current - di/dt (A/µs)
500 A
300 A
200 A
100 A
T = 130 °C
Per Junction
J
I
TM
= 800 A
50 A
VSK.250.. series
T
J
= 130 °C
per junction
VS-VSK.170PbF, VS-VSK.250PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 09-Feb-17
9
Document Number: 94417
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 23 - Gate Characteristics
Fig. 24 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Note
To order the optional hardware go to www.vishay.com/doc?95172
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
(2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
rated di/dt : 20 V, 10 Ω; tr < = 1 µs
tr
1 µs
Rectangular gate pulse
30 % rated di/dt : 10 V, 20 Ω
(1) PGM = 10 W, tp = 4 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 40 W, tp = 1 ms
(4) PGM = 60 W, tp = 0.66 ms
VSK.170/250 series Frequency limited by PG(AV)
(1) (4)
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 1
00
Square Wave Pulse Duration (s)
VSK.170.. series
Steady state value:
R
thJC
= 0.17 K/W
R = 0.125 K/W
(DC Operation)
thJC
Transient Thermal Impedance Z
thJC
(K/W)
VSK.250.. series
Device code
KTVS-VS 250 - 20 PbF
1 432 5
- Circuit configuration (see dimensions - link at the end of datasheet)
2
- Current rating
3
- Voltage code x 100 = V
RRM
(see voltage ratings table)
4
- • None = standard production
• PbF = lead (Pb)-free
5
- Vishay Semiconductors product
1

VS-VSKT170-14PBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 1400volt 170amp
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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