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PH16030L,115
P1-P3
P4-P6
P7-P9
P10-P12
9397 750 14431
© Koninklijk
e Philips Electronics N.V
. 2005. All rights reser
ved.
Product data sheet
Rev
. 01 — 24 February 2005
7 of 12
Philips Semiconductors
PH16030L
N-channel T
renchMOS™ logic le
vel FET
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold volta
g
e as a function of
junction temperature
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage
I
D
= 15 A; V
DS
= 12 V and 19 V
Fig 11.
Gate-source v
oltage as a function of gate
charge; typical v
alues
Fig 12.
Gate charge wa
veform definitions
03aa33
0
0.
5
1
1.
5
2
2.
5
-
60
0
60
120
180
T
j
(
°
C)
V
GS(t
h)
(V)
max
ty
p
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
max
ty
p
min
003aaa751
0
2
4
6
8
10
0
5
10
15
20
Q
G
(n
C)
V
GS
(V)
I
D
= 15 A
T
j
= 25
°
C
V
DD
= 19 V
12 V
003aaa508
V
GS
V
GS(th)
Q
gs1
Q
gs2
Q
gd
V
DS
Q
g(tot)
I
D
Q
gs
V
plat
9397 750 14431
© Koninklijk
e Philips Electronics N.V
. 2005. All rights reser
ved.
Product data sheet
Rev
. 01 — 24 February 2005
8 of 12
Philips Semiconductors
PH16030L
N-channel T
renchMOS™ logic le
vel FET
T
j
=2
5
°
C and 150
°
C; V
GS
=0V
V
GS
= 0 V
; f = 1 MHz
Fig 13.
Source (diode f
orward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values
Fig 14.
Input,
output
and
rever
se
transfer
capacitances
as a function of drain-source v
oltage; typical
values
003aaa752
0
20
40
60
80
0
0.3
0
.6
0
.9
1
.2
1
.5
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
150
°
C
003aaa753
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(p
F
)
C
iss
C
os
s
C
rs
s
9397 750 14431
© Koninklijk
e Philips Electronics N.V
. 2005. All rights reser
ved.
Product data sheet
Rev
. 01 — 24 February 2005
9 of 12
Philips Semiconductors
PH16030L
N-channel T
renchMOS™ logic le
vel FET
7.
P
acka
g
e outline
Fig 15.
P
acka
ge outline SOT669 (LFP
AK)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT669
MO-235
03-09-15
04-10-13
0
2.5
5 mm
scale
e
E
1
b
c
2
A
2
A
2
bc
A
e
UNIT
DIMENSIONS (mm are the original dimensions)
mm
1.10
0.95
A
3
A
1
0.15
0.00
1.20
1.01
0.50
0.35
b
2
4.41
3.62
b
3
2.2
2.0
b
4
0.9
0.7
0.25
0.19
c
2
0.30
0.24
4.10
3.80
6.2
5.8
H
1.3
0.8
L
2
0.85
0.40
L
1.3
0.8
L
1
8
°
0
°
wy
D
(1)
5.0
4.8
E
(1)
3.3
3.1
E
1
(1)
D
1
(1)
max
0.25
4.20
1.27
0.25
0.1
1
23
4
mounting
base
D
1
c
Plastic single-ended surface mounted package (LFPAK); 4 leads
SOT669
E
b
2
b
3
b
4
H
D
L
2
L
1
A
A
w
M
C
C
X
1/2
e
yC
θ
θ
(A )
3
L
A
A
1
detail X
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
P1-P3
P4-P6
P7-P9
P10-P12
PH16030L,115
Mfr. #:
Buy PH16030L,115
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 38A LFPAK
Lifecycle:
New from this manufacturer.
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PH16030L,115