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BSS138W-TP

P1-P3P4-P4
BSS138W
N-Channel
Enhancement Mode
Field Effect Transistor
Features
• High dense cell design for extremely low R
DS(ON)
• Rugged and reliable
• Lead free product is acquired
•
SOT-323 Package
• Marking Code: SS
V
DS
Drain-source Voltage 50 V
I
D
Drain Current-Continuous 0.22 A
V
GS
Gate-source Voltage
f20
V
P
D
Total Power Dissipation
0.3
W
R
©
JA
Thermal Resistance Junction to Ambient 417
к/W
T
J
Operating Junction Temperature -55 to +150
к
T
STG
Storage Temperature -55 to +150
к
Internal Block Diagram
omponents
20736 Marilla Street Chatsworth
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$%  !"#
Revision: A
2016/12/01
www.mccsemi.com
1 of 4
SOT-323
S
G
D
S
G
D
S
G
D
S
G
D
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol Parameter Rating Unit
H
alogen free available upon request by adding suffix "-HF"
•
Micro Commercial Components
M C C
R
Suggested Solder
Pad Layout
1.90
0.70
0.90
0.65
0.65
A
B
C
D
E
F
G
H
J
K
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
D .026 Nominal 0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000 .004 .000 .100
H .035 .039 .90 1.00
J .004 .010 .100 .250
DIMENSIONS
mm
C .083 .096 2.10 2.45
K .006 .016 .15 .40
1.GATE
2.
SOURCE
3.
DRAIN
1
2
3
BSS138W
Revision: A
2016/12/01
www.mccsemi.com
2 of 4
Electrical characteristics (T
a
=25Я unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Units
Off characteristics
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 50 V
Gate-body leakage I
GSS
VDS =0V, VGS =±20V
±100
nA
VDS =50V, VGS =0V
0.5
µA
Zero gate voltage drain current I
DSS
V
DS =30V, VGS =0V
100
nA
On characteristics
Gate-threshold voltage (note 1) VGS(th) VDS =V
GS
, ID =1mA 0.80 1.50 V
VGS =10V, ID =0.22A 3.50
Static drain-source on-resistance (note 1) RDS(on)
VGS =4.5V, ID =0.22A 6
Forward transconductance (note 1) g
FS
VDS =10V, ID =0.22A 0.12 S
Dynamic characteristics (note 2)
Input capacitance C
iss
27
Output capacitance C
oss
13
Reverse transfer capacitance C
rss
VDS =25V,VGS =0V, f=1MHz
6
pF
Switching characteristics
Turn-on delay time (note 1,2) td(on) 5
Rise time (note 1,2) tr 18
Turn-off delay time (note 1,2) td(off) 36
Fall time (note 1,2) tf
V
DD
=30V, V
DS
=10V,
I
D =0.29A,R
GEN
=6ȍ
14
ns
Drain-source body diode characteristics
Body diode forward voltage (note 1) V
SD
I
S
=0.44A, VGS = 0V 1.4 V
Notes:
1. Pulse Test ; Pulse Width 300µs, Duty Cycle 2%.
2. These parameters have no way to verify.
Micro Commercial Components
M C C
R
Revision: A
2016/12/01
www.mccsemi.com
3 of 4
BSS138W
Micro Commercial Components
M C C
R
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1E-3
0.01
0.1
1
012345
0.0
0.5
1.0
1.5
2.0
0.2 0.4 0.6 0.8 1.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
002 6810
0
1
2
3
4
5
6
012345
0.0
0.2
0.4
0.6
0.8
1.0
1.2
25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
Pulsed
Pulsed
T
a
=100℃
V
SD
I
S
—
—
T
a
=25℃
SOURCE CURRENT I
S
(A)
SOURCE TO DRAIN VOLTAGE V
SD
(V)
V
GS
=10V
V
GS
=5V
V
GS
=4V
V
GS
=3V
V
GS
=3V,4V,5V,6V
Output Charact
eristics
V
GS
=2V
DRAIN CURRENT I
D
(A)
DRAIN TO SOURCE VOLTAGE V
DS
(V)
V
GS
=4.5V
T
a
=25℃
Pulsed
V
GS
=10V
T
a
=25℃
Pulsed
ON-RESISTANCE R
DS(ON)
()
DRAIN CURRENT I
D
(A)
——
I
D
R
DS(ON)
T
a
=100℃
T
a
=25℃
——
ON-RESISTANCE R
DS(ON)
()
GATE TO SOURCE VOLTAGEGATE
GS
(V)
V
GS
R
DS(ON)
I
D
=500mA
V
DS
=3V
Pulsed
DRAIN CURRENT I
D
(A)
GATE TO SOURCE VOLTAGE V
GS
(V)
Transfer C
h
aracteristics
T
a
=100℃
T
a
=25℃
I
D
=250uA
Threshold Voltage
THRESHOLD VOLTAGE V
TH
(V)
JUNCTION TEMPERATURE T
j
(℃)
P1-P3P4-P4

BSS138W-TP

Mfr. #:
Buy BSS138W-TP
Manufacturer:
Micro Commercial Components (MCC)
Description:
MOSFET N-Channel MOSFET, SOT-323 package
Lifecycle:
New from this manufacturer.
Delivery:
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