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NTD24N06LT4G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 4
1 Publication Order Number:
NTD24N06L/D
NTD24N06L, STD24N06L
Power MOSFET
24 A, 60 V, Logic Level, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
v10 ms)
V
GS
V
GS
"15
"20
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
24
10
72
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
P
D
62.5
0.42
1.88
1.36
W
W/°C
W
W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc,
L = 1.0 mH, I
L
(pk) = 18 A, V
DS
= 60 Vdc)
E
AS
162 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
2.4
80
110
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
A = Assembly Location*
Y = Year
WW = Work Week
24N6L = Device Code
G = Pb−Free Package
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mount)
STYLE 2
AYWW
24
N6LG
1
2
3
4
24 AMPERES, 60 VOLTS
R
DS(on)
= 0.036 W (Typ)
N−Channel
D
S
G
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD24N06L, STD24N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
71.9
69.6
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 15 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.7
5.0
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 10 Adc)
(V
GS
= 5.0 Vdc, I
D
= 12 Adc)
R
DS(on)
−
−
36
36
45
−
mW
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 20 Adc)
(V
GS
= 5.0 Vdc, I
D
= 24 Adc)
(V
GS
= 5.0 Vdc, I
D
= 12 Adc, T
J
= 150°C)
V
DS(on)
−
−
−
0.9
0.9
0.78
1.2
−
−
Vdc
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 12 Adc) g
FS
− 19 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 814 1140
pF
Output Capacitance C
oss
− 258 360
Transfer Capacitance C
rss
− 80 115
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 24 Adc,
V
GS
= 5.0 Vdc,
R
G
= 9.1 W) (Note 3)
t
d(on)
− 9.4 20
ns
Rise Time t
r
− 97 200
Turn−Off Delay Time t
d(off)
− 23 50
Fall Time t
f
− 52 100
Gate Charge
(V
DS
= 48 Vdc, I
D
= 24 Adc,
V
GS
= 5.0 Vdc) (Note 3)
Q
T
− 16 32
nC
Q
1
− 3.4 −
Q
2
− 11 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 24 Adc, V
GS
= 0 Vdc)
(I
S
= 24 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
−
0.93
0.95
0.86
1.1
−
−
Vdc
Reverse Recovery Time
(I
S
= 24 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 49 −
ns
t
a
− 30 −
t
b
− 20 −
Reverse Recovery Stored Charge Q
RR
− 0.084 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
†
NTD24N06LT4G DPAK
(Pb−Free)
2500 / Tape & Reel
STD24N06LT4G* DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
NTD24N06L, STD24N06L
http://onsemi.com
3
0
0.06
3020
0.04
0.02
0
10 40
0.08
0.1
5
0
2
1.6
1.2
1.4
1
0.8
0.6
1
1000
10000
04
20
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.06
3020
0.04
0.02
0
10 40
Figure 3. On−Resistance versus
Gate−to−Source Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
50
−50 50250−25 75 125100
1.6 2.4 4
.8
0403020 6
0
10
3
10
30
8 V
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
T
J
= 100°C
V
GS
= 5 V
V
GS
= 10 V
150 175
V
GS
= 0 V
I
D
= 12 A
V
GS
= 5 V
40
0.08
0.1
V
GS
= 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
50
T
J
= 150°C
T
J
= 100°C
20
0
50
10
30
40
3.2 4
T
J
= 25°C
T
J
= −55°C
50
100
6 V
5 V
4.5 V
4 V
3.5 V
3 V
1.8
P1-P3P4-P6P7-P7

NTD24N06LT4G

Mfr. #:
Buy NTD24N06LT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET 24V 60A POWER MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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