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NCP3335ADMADJR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
NCP3335A
http://onsemi.com
4
PIN FUNCTION DESCRIPTION
Fixed Version
Micro8
Pin No.
DFN10
Pin No.
Pin Name Description
1, 2 1, 2 V
out
Regulated output voltage. Bypass to ground with C
out
w 1.0 mF.
3 3 SENSE For output voltage sensing, connect to Pins 1 and 2.
4 4 GND Power Supply Ground
5 7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise.
6 8 SD Shutdown pin. When not in use, this pin should be connected to the input pin.
7, 8 9, 10 V
in
Power Supply Input Voltage
− 5, 6 NC Not Connected
− EPAD EPAD Exposed thermal pad should be connected to ground.
Adjustable Version
1, 2 1, 2 V
out
Regulated output voltage. Bypass to ground with C
out
w 1.0 mF.
3 3 Adj Adjustable pin; reference voltage = 1.25 V.
4 4 GND Power Supply Ground
5 7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise.
6 8 SD Shutdown pin. When not in use, this pin should be connected to the input pin.
7, 8 9, 10 V
in
Power Supply Input Voltage
− 5, 6 NC Not Connected
− EPAD EPAD Exposed thermal pad should be connected to ground.
MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage V
in
−0.3 to +16 V
Output Voltage V
out
−0.3 to V
in
+0.3 or 10 V* V
Shutdown Pin Voltage V
sh
−0.3 to +16 V
Junction Temperature Range T
J
−40 to +150 °C
Storage Temperature Range T
stg
−50 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) JESD 22−A114−B
Machine Model (MM) JESD 22−A115−A
*Which ever is less. Reverse bias protection feature valid only if V
out
− V
in
≤ 7 V.
THERMAL CHARACTERISTICS
Characteristic
Test Conditions (Typical Value)
Unit
Min Pad Board (Note 1) 1, Pad Board (Note 1)
Micro 8
Junction−to−Air, qJA
264 174 °C/W
Junction−to−Pin, yJL2
110 100 °C/W
10 Lead DFN EPad
Junction−to−Air, qJA
215 66 °C/W
Junction−to−Pin, yJL2
55 17 °C/W
1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and
heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions
are under natural convection or zero air flow.
NCP3335A
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS – 5.0 V (V
out
= 5.0 V typical, V
in
= 5.4 V, T
A
= −40°C to +85°C, unless otherwise noted, Note 2.)
Characteristic Symbol Min Typ Max Unit
Output Voltage (Accuracy)
V
in
= 5.4 V to 9.0 V, I
load
= 0.1 mA to 500 mA, T
A
= 25°C
V
out
−0.9%
4.955
5.0 +0.9%
5.045
V
Output Voltage (Accuracy)
V
in
= 5.4 V to 9.0 V, I
load
= 0.1 mA to 500 mA, T
A
= 0°C to +85°C
V
out
−1.4%
4.930
5.0 +1.4%
5.070
V
Output Voltage (Accuracy)
V
in
= 5.4 V to 9.0 V, I
load
= 0.1 mA to 500 mA, T
A
= −40°C to +125°C
V
out
−1.5%
4.925
5.0 +1.5%
5.075
V
Line Regulation
V
in
= 5.4 V to 12 V, I
load
= 0.1 mA
Line
Reg
0.04 mV/V
Load Regulation
V
in
= 5.4 V, I
load
= 0.1 mA to 500 mA
Load
Reg
0.04 mV/mA
Dropout Voltage (See App Note)
I
load
= 500 mA
I
load
= 300 mA
I
load
= 50 mA
I
load
= 0.1 mA
V
DO
340
230
110
10
mV
Peak Output Current (See Figure 16) Ipk 500 700 830 mA
Short Output Current (See Figure 16) I
sc
930 mA
Thermal Shutdown T
J
160 °C
Ground Current
In Regulation
I
load
= 500 mA (Note 3)
I
load
= 300 mA (Note 3)
I
load
= 50 mA
I
load
= 0.1 mA
In Dropout
V
in
= 4.9 V, I
load
= 0.1 mA
In Shutdown
S
D
= 0 V
I
GND
I
GNDsh
9.0
4.6
0.8
−
−
0.07
14
7.5
2.5
190
500
1.0
mA
mA
mA
mA
Output Noise
C
nr
= 0 nF, I
load
= 500 mA, f = 10 Hz to 100 kHz, C
out
= 10 mF
C
nr
= 10 nF, I
load
= 500 mA, f = 10 Hz to 100 kHz, C
out
= 10 mF
V
noise
93
58
mVrms
mVrms
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
2.0
0.4
V
V
S
D
Input Current, V
SD
= 0 V to 0.4 V or V
SD
= 2.0 V to V
in
I
SD
0.07 1.0
mA
Output Current In Shutdown Mode, V
out
= 0 V I
OSD
0.07 1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V
in
= 0 V, V
out_forced
= 5.0 V)
I
OUTR
10
mA
2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T
J
= T
A
= 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. T
A
must be greater than 0°C.
NCP3335A
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS – 3.3 V (V
out
= 3.3 V typical, V
in
= 3.7 V, T
A
= −40°C to +85°C, unless otherwise noted, Note 4.)
Characteristic Symbol Min Typ Max Unit
Output Voltage (Accuracy)
V
in
= 3.7 V to 7.3 V, I
load
= 0.1 mA to 500 mA, T
A
= 25°C
V
out
−0.9%
3.270
3.3 +0.9%
3.330
V
Output Voltage (Accuracy)
V
in
= 3.7 V to 7.3 V, I
load
= 0.1 mA to 500 mA, T
A
= 0°C to +85°C
V
out
−1.4%
3.254
3.3 +1.4%
3.346
V
Output Voltage (Accuracy)
V
in
= 3.7 V to 7.3 V, I
load
= 0.1 mA to 500 mA, T
A
= −40°C to +125°C
V
out
−1.5%
3.250
3.3 +1.5%
3.350
V
Line Regulation
V
in
= 3.7 V to 12 V, I
load
= 0.1 mA
Line
Reg
0.04 mV/V
Load Regulation
V
in
= 3.7 V, I
load
= 0.1 mA to 500 mA
Load
Reg
0.04 mV/mA
Dropout Voltage (See App Note)
I
load
= 500 mA
I
load
= 300 mA
I
load
= 50 mA
I
load
= 0.1 mA
V
DO
340
230
110
10
mV
Peak Output Current (See Figure 16) Ipk 500 700 800 mA
Short Output Current (See Figure 16) I
sc
900 mA
Thermal Shutdown T
J
160 °C
Ground Current
In Regulation
I
load
= 500 mA (Note 5)
I
load
= 300 mA
I
load
= 50 mA
I
load
= 0.1 mA
In Dropout
V
in
= 3.2 V, I
load
= 0.1 mA
In Shutdown
S
D
= 0 V
I
GND
I
GNDsh
9.0
4.6
0.8
−
−
0.07
14
7.5
2.5
190
500
1.0
mA
mA
mA
mA
Output Noise
C
nr
= 0 nF, I
load
= 500 mA, f = 10 Hz to 100 kHz, C
out
= 10 mF
C
nr
= 10 nF, I
load
= 500 mA, f = 10 Hz to 100 kHz, C
out
= 10 mF
V
noise
69
46
mVrms
mVrms
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
2.0
0.4
V
V
S
D
Input Current, V
SD
= 0 V to 0.4 V or V
SD
= 2.0 V to V
in
I
SD
0.07 1.0
mA
Output Current In Shutdown Mode, V
out
= 0 V I
OSD
0.07 1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(V
in
= 0 V, V
out_forced
= 3.3 V)
I
OUTR
10
mA
4. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at T
J
= T
A
= 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. T
A
must be greater than 0°C.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

NCP3335ADMADJR2G

Mfr. #:
Buy NCP3335ADMADJR2G
Manufacturer:
ON Semiconductor
Description:
LDO Voltage Regulators 500mA ADJ LDO w/RBP
Lifecycle:
New from this manufacturer.
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